Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V) • S

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V) • S

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V) • S

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V) • S

Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V) • S