MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V) • S

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V) • S

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V) • S

Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

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Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

Analog Switch Applications

Analog Switch Applications Features · Ultrasmall-sized package permitting 2SK1839-applied sets to be made small and slim. · Large |yfs| · Enhancement type. · Low ON resistance.

Very High-Speed Switching, Analog Switch Applications

Ultrahigh-Speed Switching, Analog Switch Applications Features • Large |yfs|. • Enhancement type. • Low ON resistance.

Silicon N-Channel Junction FET

For impedance conversion in low frequency For infrared sensor ■ Features ● Low gate to source leakage current, IGSS ● Small capacitance of Ciss, Coss, Crss ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V) • S

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V) • S

Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

文件：580.01 Kbytes Page：4 Pages

N-Channel Enhancement Silicon MOSFET Ultrahigh-Speed Switching, Analog Switch Applications

Small-signal device - Small-signal FETs - Junction FETs