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2SK183价格
参考价格:¥0.2860
型号:2SK1830 品牌:TOSHIBA 备注:这里有2SK183多少钱,2025年最近7天走势,今日出价,今日竞价,2SK183批发/采购报价,2SK183行情走势销售排行榜,2SK183报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N CHANNEL MS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS • 2.5 V Gate Drive • Low Threshold Voltage: Vth = 0.5~1.5 V • High Speed • Enhancement-Mode • Small Package | TOSHIBA 东芝 | |||
Silicon N-Channel MOS FET Application High speed power switching • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N-Channel MOS FET Application High speed power switching • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Features • High breakdown voltage (VDSS = 1500V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) 7.0Ω (max) ·Enhancement mode: VGS(th) = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators | ISC 无锡固电 | |||
Silicon N Channel MOS FET Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N-Channel MOSFET Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter | KEXIN 科信电子 | |||
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | RENESAS 瑞萨 | |||
Analog Switch Applications Analog Switch Applications Features · Ultrasmall-sized package permitting 2SK1839-applied sets to be made small and slim. · Large |yfs| · Enhancement type. · Low ON resistance. | SANYO 三洋 | |||
N CHANNEL MS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) 文件:529.61 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
N CHANNEL MS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) 文件:529.61 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
isc N-Channel MOSFET Transistor 文件:310.01 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon N-Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 | |||
Power MOSFETs | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor 文件:309.63 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon N-Channel Power F-MOS FET | Panasonic 松下 | |||
Fast Switching Speed 文件:55.86 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Fast Switching Speed 文件:55.85 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:301.51 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Isc N-Channel MOSFET Transistor 文件:321.14 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:318.34 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor 文件:310.14 Kbytes Page:2 Pages | ISC 无锡固电 |
2SK183产品属性
- 类型
描述
- 型号
2SK183
- 制造商
Toshiba
- 功能描述
Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
24+ |
TO3P |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
HITACHI/日立 |
24+ |
TO 3P |
158459 |
明嘉莱只做原装正品现货 |
|||
瑞萨 |
24+ |
NA/ |
11318 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
日立 |
23+ |
TO-3P |
5000 |
全新原装假一赔十 |
|||
TOS |
25+ |
模块 |
18000 |
原厂直接发货进口原装 |
|||
24+ |
2000 |
||||||
RENESAS/瑞萨 |
20+ |
TO-3P |
6 |
现货很近!原厂很远!只做原装 |
|||
RENESAS |
5 |
||||||
FUJ |
25+ |
TO-3P |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS |
15+ |
TO-3P |
70 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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2SK183规格书下载地址
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2SK183数据表相关新闻
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2019-10-30
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