2SK183价格

参考价格:¥0.2860

型号:2SK1830 品牌:TOSHIBA 备注:这里有2SK183多少钱,2025年最近7天走势,今日出价,今日竞价,2SK183批发/采购报价,2SK183行情走势销售排行榜,2SK183报价。
型号 功能描述 生产厂家 企业 LOGO 操作

N CHANNEL MS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS • 2.5 V Gate Drive • Low Threshold Voltage: Vth = 0.5~1.5 V • High Speed • Enhancement-Mode • Small Package

TOSHIBA

东芝

Silicon N-Channel MOS FET

Application High speed power switching • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Application High speed power switching • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • High breakdown voltage (VDSS = 1500V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

·FEATURES ·Low drain-source on-resistance: RDS(ON) 7.0Ω (max) ·Enhancement mode: VGS(th) = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators

ISC

无锡固电

Silicon N Channel MOS FET

Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOSFET

Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter

KEXIN

科信电子

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

RENESAS

瑞萨

Analog Switch Applications

Analog Switch Applications Features · Ultrasmall-sized package permitting 2SK1839-applied sets to be made small and slim. · Large |yfs| · Enhancement type. · Low ON resistance.

SANYO

三洋

N CHANNEL MS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

文件:529.61 Kbytes Page:5 Pages

TOSHIBA

东芝

N CHANNEL MS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

文件:529.61 Kbytes Page:5 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:310.01 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

HitachiHitachi Semiconductor

日立日立公司

Power MOSFETs

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:309.63 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N-Channel Power F-MOS FET

Panasonic

松下

Fast Switching Speed

文件:55.86 Kbytes Page:2 Pages

ISC

无锡固电

Fast Switching Speed

文件:55.85 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:301.51 Kbytes Page:2 Pages

ISC

无锡固电

Isc N-Channel MOSFET Transistor

文件:321.14 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:318.34 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:310.14 Kbytes Page:2 Pages

ISC

无锡固电

2SK183产品属性

  • 类型

    描述

  • 型号

    2SK183

  • 制造商

    Toshiba

  • 功能描述

    Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R

更新时间:2025-12-25 8:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
24+
TO3P
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
HITACHI/日立
24+
TO 3P
158459
明嘉莱只做原装正品现货
瑞萨
24+
NA/
11318
优势代理渠道,原装正品,可全系列订货开增值税票
日立
23+
TO-3P
5000
全新原装假一赔十
TOS
25+
模块
18000
原厂直接发货进口原装
24+
2000
RENESAS/瑞萨
20+
TO-3P
6
现货很近!原厂很远!只做原装
RENESAS
5
FUJ
25+
TO-3P
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
RENESAS
15+
TO-3P
70
一级代理,专注军工、汽车、医疗、工业、新能源、电力

2SK183数据表相关新闻

  • 2SJ652-1E 绝缘栅场效应管(MOSFET)

    2SJ652-1E 原装正品 现货供应

    2024-3-23
  • 2SD882SL-TO92B-P-TG_UTC代理商

    2SD882SL-TO92B-P-TG_UTC代理商

    2023-2-8
  • 2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

    2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio

    2021-6-24
  • 2SK1485-T1

    2SK1485-T1,当天发货0755-82732291全新原装现货或门市自取.

    2020-9-12
  • 2SK1985

    2SK1985,全新原装当天发货或门市自取0755-82732291.

    2019-10-30
  • 2SK1985-01MR

    2SK1985-01MR,全新原装当天发货或门市自取0755-82732291.

    2019-10-30