型号 功能描述 生产厂家 企业 LOGO 操作

FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)

Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High

TOSHIBA

东芝

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High

TOSHIBA

东芝

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High

TOSHIBA

东芝

Low Noise Audio Amplifier Applications

Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High

TOSHIBA

东芝

Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

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TOSHIBA

东芝

更新时间:2025-12-25 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA(东芝)
24+
NA/
8735
原厂直销,现货供应,账期支持!
TOSHIBA/东芝
25+
TO92SOT23
51848
百分百原装现货 实单必成 欢迎询价
TOSHIBA
24+
TO-90
5500
只做原装正品现货 欢迎来电查询15919825718
TOS
22+
TO-92
20000
公司只有原装 品质保证
TOS
NEW
TO-92
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
TOSHIBA/东芝
2020+
明嘉莱只做原装正品现货
2510000
T0-92
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
MIT
23+
TO-220
5000
专做原装正品,假一罚百!
TOSHIBA/东芝
2450+
TO92
6885
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA/东芝
23+
DIPSOP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、

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