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型号	功能描述	生产厂家企业	LOGO
2SK163	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK163	Field Effect Transistor SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK163	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR DESCRIPTION FEATURES The 2SK163 is designed for use in the first stage for AF Low Noise amplifier. • Low Equivalent Noise Voltage. en=1.3 nV/HZ TYP. (VDs =10 V, Ip =1.0 mA, f=1.0 kHz) • High Voltage and High Ysl VDSX>50 V (VGS =-2.0 V) INfs>7.0 mS (VDs = 10 V, ID = 1.0 mA, f= 1.0 kHz)	NEC 瑞萨	NEC
2SK163	Silicon N-Channel MOS FET	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK1636	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK1636	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1636L	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK1636L	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1636L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1636L-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1636S	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1636S	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK1636S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1636STL-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1637	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK1637	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1637	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1637-E	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1630	Drain Current ?밒D= 3A@ TC=25C 文件：64.86 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1631	Drain Current ?밒D= 3A@ TC=25C 文件：66.35 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1632	Drain Current ?밒D= 5A@ TC=25C 文件：64.86 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1633	Drain Current ?밒D= 5A@ TC=25C 文件：66.37 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1634	Drain Current ?밒D= 5A@ TC=25C 文件：67.13 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1635	Drain Current ?밒D= 50A@ TC=25C 文件：65.91 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1636(L)	Power switching MOSFET	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK1636(L)/(S)	Silicon N Channel MOS FET	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK1636L	isc N-Channel MOSFET Transistor 文件：299.9 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1636S	isc N-Channel MOSFET Transistor 文件：299.37 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1637	isc N-Channel MOSFET Transistor 文件：296.6 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1638	Drain Current ?밒D= 3A@ TC=25C 文件：64.849 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1639	Drain Current ?밒D= 4A@ TC=25C 文件：64.849 Kbytes Page：2 Pages	ISC 无锡固电	ISC

2SK163产品属性

类型
描述
型号
2SK163
制造商
Panasonic Industrial Company
功能描述
TRANSISTOR

2SK163供应商更多...

更新时间：2026-2-28 22:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海意淼电子科技有限公司	2SK163	MAX	23+	SMD	3404	全新原装假一赔十	询价
深圳市金芯世纪电子有限公司	2SK1636	RENESAS/瑞萨	22+	SOT263	100000	代理渠道/只做原装/可含税	询价
深圳市威雅利发展有限公司	2SK1637	HITACHI	00+	TO-220F	508	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
中天科工半导体（深圳）有限公司	2SK1631	MITSUBISHI/三菱	25+	TO-220F	45000	MITSUBISHI/三菱全新现货2SK1631即刻询购立享优惠#长期有排单订	询价
深圳市鸿昌盛电子科技有限公司	2SK163-T-A(M)	NEC	25+		7500	公司现货库存	询价
深圳市振宏微科技有限公司	2SK1639	HIT	23+	TO-220	10000	专做原装正品,假一罚百!	询价
深圳市中联芯电子有限公司	2SK1637-VB	VBSEMI/微碧半导体	24+	TO220F	7800	全新原厂原装正品现货,低价出售,实单可谈	询价
深圳市东来宝电子科技有限公司	2SK163M	NEC	24+	TO-92	99750	郑重承诺只做原装进口现货	询价
洪芯国际半导体（深圳）有限公司	2SK1639	HIT	26+	SOP8	86720	全新原装正品价格最实惠假一赔百	询价
深圳市创新迹电子有限公司	2SK163-K	NEC	22+	TO-92	20000	公司只有原装品质保证	询价

2SK163芯片相关品牌

2SK163规格书下载地址

2SK163参数引脚图相关

2SK163数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品现货供应
2024-3-23
2SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-8
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
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2SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
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2SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
2SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30

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2SK163产品属性

2SK163供应商更多...

2SK163芯片相关品牌

2SK163规格书下载地址

2SK163参数引脚图相关

2SK163数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)

2SD882SL-TO92B-P-TG_UTC代理商

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK1485-T1

2SK1985

2SK1985-01MR

DdatasheetPDF页码索引