Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Field Effect Transistor

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N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR

DESCRIPTION FEATURES The 2SK163 is designed for use in the first stage for AF Low Noise amplifier. • Low Equivalent Noise Voltage. en=1.3 nV/HZ TYP. (VDs =10 V, Ip =1.0 mA, f=1.0 kHz) • High Voltage and High Ysl VDSX>50 V (VGS =-2.0 V) INfs>7.0 mS (VDs = 10 V, ID = 1.0 mA, f= 1.0 kHz)