Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 45A@ TC=25℃ · Drain Source Voltage -VDSS= 65V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.02Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

DC?묭C Converter and Motor Drive Applications

DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current : IDSS = 300 μA (max) (VDS = 500 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

N Channel MOS Type (pie -MOS III.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current : IDSS = 300 μA (max) (VDS = 500 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

DC?묭C Converter and Motor Drive Applications

DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current : IDSS = 300 μA (max) (VDS = 500 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.3 Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

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Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

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