Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • Micaless package facilitating mounting.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.0A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

iscN-Channel MOSFET Transistor

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Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-state resistance. • Ultrahigh-speed switching. • Micaless package facilitating easy mounting.

Fast Switching Speed

DESCRIPTION • Drain Current –ID=1A@ TC=25℃ • Drain Source Voltage- : VDSS= 450V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching