型号 功能描述 生产厂家 企业 LOGO 操作
2SK134

LOW FREQUENCY POWER AMPLIFIER

HitachiHitachi Semiconductor

日立日立公司

2SK134

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 140V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.4Ω(Max)@VGS= 10V DESCRITION ·Switching power supplies ·Switching converters,motor driver,relay driver

ISC

无锡固电

2SK134

iscN-Channel MOSFET Transistor

文件:827.27 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

* Low On-Resistance * High Speed Switching * Low Drive Current * No Secondary Breakdown * Suitable for Switching Regulator and DC-DC Converter

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

* Output current up to 100 mA * Output voltages of 3.3; 5; 6; 8; 9; 10; 12; 15; 18;24 V * Thermal overload protection * Short-circuit protection * No external components are required * Available in either ± 4 (AC) or ± 8 (C) selection

RENESAS

瑞萨

Silicon N Channel MOS FET

* Output current up to 100 mA * Output voltages of 3.3; 5; 6; 8; 9; 10; 12; 15; 18;24 V * Thermal overload protection * Short-circuit protection * No external components are required * Available in either ± 4 (AC) or ± 8 (C) selection

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

2SK1348

2SK1348

ETCList of Unclassifed Manufacturers

未分类制造商

Fast Switching Speed

文件:67.08 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFETs

RENESAS

瑞萨

Fast Switching Speed

文件:67.06 Kbytes Page:2 Pages

ISC

无锡固电

Fast Switching Speed

文件:67.06 Kbytes Page:2 Pages

ISC

无锡固电

Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P

ETC

知名厂家

Power MOSFETs

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:296.77 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:296.64 Kbytes Page:2 Pages

ISC

无锡固电

Fast Switching Speed

文件:61.5 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:305.62 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:296.64 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:296.35 Kbytes Page:2 Pages

ISC

无锡固电

2SK134产品属性

  • 类型

    描述

  • 型号

    2SK134

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    LOW FREQUENCY POWER AMPLIFIER

更新时间:2025-11-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
NA/
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
Renesas(瑞萨)
24+
NA/
8735
原厂直销,现货供应,账期支持!
RENESAS/瑞萨
2450+
TO-247
9850
只做原装正品现货或订货假一赔十!
TOSHIBA/东芝
22+
TO-220
100000
代理渠道/只做原装/可含税
HITACHI/日立
24+
TO 3P
158212
明嘉莱只做原装正品现货
RENESAS/瑞萨
11+
TO-247
2235
RENESAS
25+23+
TO-247
27525
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
2023+
TO-3P
8635
一级代理优势现货,全新正品直营店
RENESAS
19+
TO-3P
26000
24+
2000

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