SI N CHANNEL JUNCTION

Silicon N-Channel Junction FET (2SK128,2SK155,2SK136)

Silicon N-Channel Junction FET (2SK128,2SK155,2SK136)

N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W)

- Include Fast Recovery Diode - High Voltage - Low Driving Power N-channel MOS-FET 500V 0,5 Ohm 18A 150W

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS(on) = 0.18 Ω MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.24 Ω MAX. (VGS = 4 V, ID = 2 A) • Low Ciss Ciss =

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1284 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) ≤ 0.32 Ω (VGS = 10 V, ID = 2 A) RDS(on) ≤ 0.40 Ω (VGS = 4.0 V, ID = 2 A) • Low Ciss: Ciss = 500 p

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.32Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS Field Effect Power Transistor

MOS Field Effect Power Transistor Features Low on-state resistance RDS(on)

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

N-Channel MOSFET

N-Channel MOSFET Features Lowon-state resistance RDS(on) 0.32 .@VGS=10V,ID=2A RDS(on) 0.40 @VGS=4V,ID=2A LowCiss Ciss=500pF TYP. Built-in G-S Gate Protection Diode

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS(on) = 0.32 Ω MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.40 Ω MAX. (VGS = 4 V, ID = 2 A) • Low Ciss Ciss

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.32Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1286 is N-channel MOS Field Effect Transistor designed for solenoid, motor an lamp driver.

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

HANNEL MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Fast Switching Speed

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MOS FIELD EFFECT POWER TRANSISTOR

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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N-Channel 100-V (D-S) MOSFET

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