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2SK127价格
参考价格：￥0.6500
型号：2SK1273 品牌：NEC 备注：这里有2SK127多少钱，2024年最近7天走势，今日出价，今日竞价，2SK127批发/采购报价，2SK127行情走势销售排行榜，2SK127报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICONN-CHANNELMOSFETHIGHSPEEEDPOWERSWITCHING SILICONN-CHANNELMOSFETHIGHSPEEEDPOWERSWITCHING | HitachiHitachi, Ltd. 日立公司 |  |   | |
NCHANNELMOSFIELDEFFECTPOWERTRANSISTOR SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK1271isN-ChannelMOSFieldEffectTransistordesignedforhighvoltageswitchingapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK1271isN-ChannelMOSFieldEffectTransistordesignedforhighvoltageswitchingapplications. FEATURES •Highvoltagerating(VDSS=1400V) •Lowon-stateresistance RDS(on)=4.0ΩMAX.(VGS=10V,ID=3A) •LowCissCiss=18 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
MOSFIELDEFFECTTRANSISTOR The25K1272,N-channelverticaltypeMOSFET,isaswitching devicewhichcanbedrivendirectlybytheoutputofICshavinga5V powersource. TheMOSFEThasexcellentswitchingcharacteristicsandissuitable foruseasahigh-speedswitchingdeviceindigitalcircuits. FEATURES -Dir | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
FieldEffectTransistor SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFieldEffectTransistor Features •DirectlydriverbyIcshavinga5Vpowersource. •Haslowon-satateresistance RDS(on)=1.00MAX.@VGS=4.0V,ID=0.5A RDS(on)=0.65MAX.@VGS=10V,ID=0.5A •Notnecessarytoconsiderdrivingcurrentbecauseofitshighinputimpedance. •Possibletoreducethenumbero | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
MOSFIELDEFFECTTRANSISTOR FEATURES -DirectlydrivenbyICshavinga5Vpowersource -Haslowon-stateresistance. Ros(on)=1.002MAX.@Vgs=40V,Ip=05A Ros(on)=0.652MAX.@Vgs=10V,Ip=05A -Notnecessaryto_considerdrivingcurrentbecauseofitshighinputimpedance. -Possible0reducethenumberof | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
FieldEffectTransistor SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR N-CHANNELMOSFET FORHIGHSPEEDSWITCHING | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channelMOS-FET >Features -IncludeFastRecoveryDiode -HighVoltage -LowDrivingPower >Applications -MotorControl -Inverters -Choppers | FujiFUJI CORPORATION 株式会社ＦＵＪＩ |  | | |
N-ChannelMOS-FET(250V,0.12Ohm,30A,150W) >Features -IncludeFastRecoveryDiode -HighVoltage -LowDrivingPower >Applications -MotorControl -Inverters -Choppers | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
FastSwitchingSpeed DESCRIPTION •DrainCurrent–ID=30A@TC=25℃ •DrainSourceVoltage- :VDSS=250V(Min) •FastSwitchingSpeed APPLICATIONS •highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
FastSwitchingSpeed DESCRIPTION •DrainCurrent–ID=10A@TC=25℃ •DrainSourceVoltage-:VDSS=500V(Min) •FastSwitchingSpeed APPLICATIONS •Designedforhighvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channelMOS-FET >Features -IncludeFastRecoveryDiode -HighVoltage -LowDrivingPower >Applications -MotorControl -Inverters -Choppers | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
N-channelMOS-FET >Features -IncludeFastRecoveryDiode -HighVoltage -LowDrivingPower >Applications -MotorControl -Inverters -Choppers | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | | |
FastSwitchingSpeed DESCRIPTION •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •FastSwitchingSpeed APPLICATIONS •Designedforhighvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：833.72 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel0-V(D-S)MOSFET 文件：1.76414 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelMOSFET 文件：1.38242 Mbytes Page：4 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
N-Channel60V(D-S)MOSFET 文件：2.13806 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：849.74 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：829.11 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2SK127产品属性
- 类型
描述
- 型号
2SK127
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FUJI |
22+23+ |
TO-3P |
35695 |
绝对原装正品全新进口深圳现货 |
|||
FUJI |
21+ |
TO-3P |
65200 |
一级代理/放心采购 |
|||
HITACHI/日立 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
FUJI |
23+ |
TO-3P |
9516 |
||||
FUJITSU-富士通 |
24+25+/26+27+ |
TO-247-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
2000 |
|||||||
富士通 |
1746+ |
TO3P |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
|||
原厂 |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
|||
N |
23+ |
TO-TO-220FM |
33500 |
全新原装真实库存含13点增值税票! |
|||
FUJI |
2023+ |
TO-3P |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
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2SK127规格书下载地址
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2SK127数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E原装正品现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-302SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30
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