N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0) • High breakdown voltage: VGDS= −50 V • Low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ) • High input impedance: IGSS= −1 nA (max) (VGS= −30 V)

Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

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TRANSISTOR

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Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

JFET

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Drain Current ?밒D=3.5A@ TC=25C

DESCRIPTION • Drain Current –ID=3.5A@ TC=25℃ • Drain Source Voltage- : VDSS=900V(Min) APPLICATIONS • Designed for high voltage, high speed power switching

N-CHANNEL SILICON POWER MOS-FET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =3.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4.0A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.85Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

Silicon N Channel Junction Type Low Noise Audio Amplifier Applications

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isc N-Channel MOSFET Transistor

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Drain Current ?밒D=4A@ TC=25C

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N-CHANNEL SILICON POWER MOS-FET

Isc N-Channel MOSFETransistor

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Isc N-Channel MOSFETransistor

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Isc N-Channel MOSFETransistor

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