| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK1169-E | Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 |   | |
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | HITACHIHitachi Semiconductor 日立日立公司 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：379.46 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
23+ |
TO3P |
50000 |
全新原装正品现货,支持订货 |
|||
PHI |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
FUJI |
24+ |
NA |
6300 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
HITACHI |
23+ |
TO-3P |
5000 |
专做原装正品,假一罚百! |
|||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
HITACHI |
2023+ |
TO-3P |
50000 |
原装现货 |
|||
RENESAS/瑞萨 |
23+ |
TO-3P |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS |
25+ |
TO-3P |
27500 |
原装正品,价格最低! |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
日立 |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
2SK1169-E芯片相关品牌
2SK1169-E规格书下载地址
2SK1169-E参数引脚图相关
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2SK1169-E数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品 现货供应
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2019-10-302SK1985-01MR
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2019-10-30
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