型号 功能描述 生产厂家 企业 LOGO 操作
2SJ599-ZK

Pch Single Power Mosfet -60V -20A 75Mohm Mp-3Zk/To-252

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 75 mΩMAX. (VGS= –10 V, ID= –10 A) RDS(on)2= 111 mΩMAX. (VGS= –4.0 V, ID= –10 A) • Low input capacitance: Ciss= 13

NEC

瑞萨

MOS Field Effect Transistor

MOS Field Effect Transistor Features Low on-resistance RDS(on)1=75mΩ MAX. (VGS=-10 V, ID=-10A) RDS(on)2= 110mΩ MAX. (VGS=-4.0V,ID=-10 A) Low Ciss:Ciss = 1300 pF TYP. Built-in gate protection diode

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low i

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low i

RENESAS

瑞萨

P-Channel MOSFET

文件:978.97 Kbytes Page:2 Pages

KEXIN

科信电子

2SJ599-ZK产品属性

  • 类型

    描述

  • 型号

    2SJ599-ZK

  • 制造商

    Renesas Electronics Corporation

更新时间:2026-1-2 8:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
2016+
TO252-2
5000
只做原装,假一罚十,公司可开17%增值税发票!
NEC
2023+
TO252
8800
正品渠道现货 终端可提供BOM表配单。
RENESAS/瑞萨
24+
NA/
3775
原装现货,当天可交货,原型号开票
NEC
25+23+
TO252
49369
绝对原装正品现货,全新深圳原装进口现货
RENESAS/瑞萨
20+
TO-252
32500
现货很近!原厂很远!只做原装
RENESAS
22+
TO252
20000
公司只有原装 品质保证
RENESAS
24+
TO252
16900
原装正品现货支持实单
RENESAS/瑞萨
20+
TO-252
38900
原装优势主营型号-可开原型号增税票
RENESAS
1501+
TO-252
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

2SJ599-ZK数据表相关新闻