位置：首页 > IC中文资料第7822页 > 2SJ552(L)|2SJ552(S)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：115.37 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIT |
23+ |
TO-262 |
1250 |
全新原装正品现货,支持订货 |
|||
RENESAS |
22+ |
TO-263-2 |
6000 |
十年配单,只做原装 |
|||
RENESAS/瑞萨 |
25+ |
TO-263-2 |
106 |
就找我吧!--邀您体验愉快问购元件! |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
RENESAS/瑞萨 |
23+ |
TO-263-2 |
50000 |
全新原装正品现货,支持订货 |
|||
HIT |
06+ |
TO-262 |
1250 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HITACHI/日立 |
23+ |
220 |
63881 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS/瑞萨 |
2450+ |
TO263 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
HITACHI/日立 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
2SJ552(L)|2SJ552(S)芯片相关品牌
2SJ552(L)|2SJ552(S)规格书下载地址
2SJ552(L)|2SJ552(S)参数引脚图相关
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- 2SJ541
- 2SJ540
- 2SJ539
2SJ552(L)|2SJ552(S)数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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