| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：116.92 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
4250 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
22+ |
TO-263 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
2450+ |
TO-263 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HITACHI |
23+ |
TO-263 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
HIT |
24+ |
TO-251 |
20000 |
||||
RENESAS |
26+ |
TO-263 |
360000 |
进口原装现货 |
|||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
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2SJ549TL规格书下载地址
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2SJ549TL数据表相关新闻
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2SJ652-1E 原装正品 现货供应
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2019-10-30
DdatasheetPDF页码索引
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