Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

Silicon P Channel MOS FET

• Low on-resistance RDS (on)= 0.028 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.037Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

Pch Single Power Mosfet -60V -30A 0.037Mohm To220Cfm

The 2SJ533 is a Pch Single Power Mosfet -60V -30A 0.037Mohm To220Cfm.

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET

• Low on-resistance RDS (on)= 0.028 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.