P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SJ461 is a switching device which can be driven directly by a 2.5 V power source. The MOS FET has excellent switching characteristic and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source • Not necessary

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ461 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES • Can be driven by a 2.5 V power source • Not necess

MOS Field Effect Transistor

Features ● Can be driven by a 2.5V power source. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the bias resistor.

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES • Can b