位置：首页 > IC中文资料第7762页 > 2SJ351-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ351-E | Silicon P Channel MOS FET Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with | RENESAS 瑞萨 |   | |
Silicon P-Channel MOS FET Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with | RENESAS 瑞萨 | |
2SJ351-E产品属性
- 类型
描述
- 型号
2SJ351-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
NEC |
25+23+ |
SOT-89 |
18614 |
绝对原装正品全新进口深圳现货 |
|||
HITACHI |
2012 |
TO-3P |
80 |
||||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
renesas |
25+ |
500000 |
行业低价,代理渠道 |
||||
NEC |
24+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
23+ |
SOT-89 |
30000 |
原装正品,假一罚十 |
|||
NEC |
25+ |
SOT-89 |
30000 |
代理全新原装现货,价格优势 |
|||
FUJ |
23+24 |
TO220F |
16790 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
|||
HITACHI |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
2SJ351-E规格书下载地址
2SJ351-E参数引脚图相关
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2SJ351-E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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