2SJ32价格
参考价格：￥0.8450
型号：2SJ324 品牌：NEC 备注：这里有2SJ32多少钱，2026年最近7天走势，今日出价，今日竞价，2SJ32批发/采购报价，2SJ32行情走势销售排行榜，2SJ32报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Very High-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. | SANYO 三洋 |   | ||
isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -4A@ TC=25℃ · Drain Source Voltage -VDSS= -250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) = 0.18 Ω TYP. (VGS = −10 V, ID = −1.0 A) RDS(on) = 0.36 Ω TYP. (VGS = −4 V, ID = −0.8 A) • Low Cis | RENESAS 瑞萨 | | ||
MOS Field Effect Power Transistors Features ● Low on-state resistance RDS(on)=0.18 Ω (VGS=-10V,ID=-1A) RDS(on)=0.36 Ω (VGS=-4V,ID=-0.8A) ● Built-in G-S Gate Protection Diode | KEXIN 科信电子 | | ||
MOS Field Effect Power Transistors Features ● Low on-state resistance RDS(on)=83m Ω (VGS=-10V,ID=-2A) RDS(on)=0.15 Ω (VGS=-4V,ID=-1.6A) ● Built-in G-S Gate Protection Diode | KEXIN 科信电子 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ325 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) = 0.08 Ω TYP. (VGS = −10 V, ID = −2.0 A) RDS(on) = 0.15 Ω TYP. (VGS = −4 V, ID = −1.6 A) • Low Cis | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ326 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) = 0.28 Ω TYP. (VGS = −10 V, ID = −1.0 A) RDS(on) = 0.50 Ω TYP. (VGS = −4 V, ID = −0.8 A) • Low Cis | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ327 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) = 0.13 Ω TYP. (VGS = −10 V, ID = −2.0 A) RDS(on) = 0.21 Ω TYP. (VGS = −4 V, ID = −1.6 A) • Low Cis | RENESAS 瑞萨 | | ||
CHANNEL MOS FIELD EFFECT POWER TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | RENESAS 瑞萨 | | ||
CHANNEL MOS FIELD EFFECT POWER TRANSISTOR | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | RENESAS 瑞萨 | | ||
isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -15A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.06Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：345.37 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：386.58 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：386.56 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
P-Channel 4 0 V (D-S) MOSFET 文件：976.45 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：386.56 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：347.1 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
P-Channel 4 0 V (D-S) MOSFET 文件：976.18 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：347.1 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
P-Channel 60-V (D-S) MOSFET 文件：988.39 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：346.81 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：346.81 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：344.45 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
P-Channel 60 V (D-S) MOSFET 文件：933.01 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | |
2SJ32产品属性
- 类型
描述
- RDS (ON) (mohm) max. @10V or 8V：
170
- Downloadable：
SPICE
- Ciss (pF) typ.：
750
- Package Type：
MP-3/TO-251
- Vgs (off) (V) max.：
-2
- Nch/Pch：
Pch
- VGSS (V)：
20
- Number of Channels：
Single
- Pch (W)：
20
- Automotive：
YES
- Application：
Low Voltage General Switching
- VDSS (V) max.：
-60
- Mounting Type：
Through Hole
- ID (A)：
-4
- QG (nC) typ.：
27
- RDS (ON) (mohm) max. @4V or 4.5V：
340
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAYON |
23+ |
TO-220 |
13880 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
26+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SANYO/三洋 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS |
24+ |
60000 |
|||||
SANY |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
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