位置：首页 > IC中文资料第1907页 > 2SJ319S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ319S | Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ319S | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | |
2SJ319S | Silicon P-Channel MOSFET Features Low on-state resistance RDS(on)=2.3 (VGS=-10V,ID=-2A) High speed switching | KEXIN 科信电子 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：1.2462 Mbytes Page：4 Pages | KEXIN 科信电子 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | |
2SJ319S产品属性
- 类型
描述
- 型号
2SJ319S
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
HITACHI |
26+ |
SOT-252 |
12000 |
原装，正品 |
|||
RENESAS |
25+23+ |
TO252 |
73048 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS |
24+ |
60000 |
|||||
HITACHI |
07+ |
TO220 |
49 |
||||
HITACHI |
24+ |
SOT-252 |
5000 |
全新原装正品,现货销售 |
|||
HITACHI/日立 |
25+ |
TO220 |
9800 |
全新原装现货,假一赔十 |
|||
HITACHI |
25+ |
SOT-252 |
8000 |
只有原装 |
|||
RENESAS/瑞萨 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HITACHI |
25+ |
TO-251 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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2019-10-30
DdatasheetPDF页码索引
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