位置：首页 > IC中文资料第5775页 > 2SJ319
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ319 | Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ319 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | |
2SJ319 | Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOSFET Features Low on-state resistance RDS(on)=2.3 (VGS=-10V,ID=-2A) High speed switching | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：1.2462 Mbytes Page：4 Pages | KEXIN 科信电子 | |
2SJ319产品属性
- 类型
描述
- 型号
2SJ319
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P-Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
26+ |
SOT-252 |
12000 |
原装，正品 |
|||
RENESAS |
2023+ |
TO-252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
2026+ |
SOT252 |
65428 |
百分百原装现货 实单必成 |
|||
NEC |
25+ |
SOT252 |
37500 |
原装正品现货,价格有优势! |
|||
HITACHI |
98+ |
SOT-252 |
1448 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HITACHI/日立 |
2450+ |
TO-251 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
HITACHI/日立 |
23+ |
TO-251 |
10089 |
优势 /原装现货长期供应现货支持 |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
15000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS |
26+ |
TO-252 |
360000 |
进口原装现货 |
|||
HITACHI |
24+ |
SOT-252 |
5000 |
全新原装正品,现货销售 |
2SJ319规格书下载地址
2SJ319参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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