位置：首页 > IC中文资料第5775页 > 2SJ319
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ319 | Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ319 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | |
2SJ319 | Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOSFET Features Low on-state resistance RDS(on)=2.3 (VGS=-10V,ID=-2A) High speed switching | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：1.2462 Mbytes Page：4 Pages | KEXIN 科信电子 | |
2SJ319产品属性
- 类型
描述
- 型号
2SJ319
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P-Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
23+ |
TO-251 |
10089 |
优势 /原装现货长期供应现货支持 |
|||
NEC |
24+ |
SOIC/5.2mm |
6540 |
原装现货/欢迎来电咨询 |
|||
HITACHI/日立 |
24+ |
TO-251 |
60000 |
||||
NEC |
2026+ |
SOT252 |
65428 |
百分百原装现货 实单必成 |
|||
NEC |
24+ |
SOT252 |
9600 |
原装现货,优势供应,支持实单! |
|||
RENESAS |
2511 |
TO-252 |
3848 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
HITACHI |
24+ |
SOT-252 |
5000 |
全新原装正品,现货销售 |
|||
NEC |
24+ |
SOIC/5.2mm |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
15000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
2SJ319规格书下载地址
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2SJ319数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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