型号 功能描述 生产厂家 企业 LOGO 操作
2SJ247-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

2SJ247-E产品属性

  • 类型

    描述

  • 型号

    2SJ247-E

  • 制造商

    Renesas Electronics Corporation

更新时间:2026-1-28 9:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAYON
23+
TO-220
13880
原厂授权代理,海外优势订货渠道。可提供大量库存,详
VBSEMI/台湾微碧
24+
TO-220AB
60000
TOSHIBA
26+
TO-220F
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
sanyo
24+
TO-220
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
sanyo
24+
TO-220
6540
原装现货/欢迎来电咨询
SANYO/三洋
22+
SOT263
100000
代理渠道/只做原装/可含税
HITACHI
24+
TO-220
1000
原装现货假一罚十
NEC
26+
X3DFN-2
86720
全新原装正品价格最实惠 假一赔百
24+
2000
SANYO/三洋
2023+
TO-220
6400
原厂全新正品旗舰店优势现货

2SJ247-E数据表相关新闻