NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD999 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.

NPN Silicon Epitaxial Transistor

Features ● World standard miniature package:SOT-89. ● Low collector saturation voltage. ● Excellent dc current gain linearity.

TRANSISTOR(NPN)

FEATURES ● Low Collector-Emitter Saturation Voltage ● Mini Power Type Package ● Excellent DC Current Gain Linearity

NPN Silicon Epitaxial Transistor

FEATURES ● Low Collector Saturation Voltage: VCE(sat)

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low VCE(sat), excellent hFE linearity, complements the 2SB798. Applications Audio frequency power amplifier applications.

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

NPN Silicon Epitaxial Transistor

FEATURES Low Collector Saturation Voltage: VCE(sat)

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector-Emitter Saturation Voltage ● Mini Power Type Package ● Excellent DC Current Gain Linearity

普通三极管

双极型晶体管

晶体管

(NPN) Plastic-Encapsulate Transistor

FEATURES ● Low Collector-Emitter Saturation Voltage ● Mini Power Type Package ● Excellent DC Current Gain Linearity ● Moisture Sensitivity Level 1

NPN TRANSISTOR

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