TO-126 Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB649/A(PNP)

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A(PNP) ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFElinearity APPLICATIONS ·For low-frequency power amplifier applications