2SD669晶体管资料

  • 2SD669(A)别名:2SD669(A)三极管、2SD669(A)晶体管、2SD669(A)晶体三极管

  • 2SD669(A)生产厂家:日本日立公司

  • 2SD669(A)制作材料:Si-NPN

  • 2SD669(A)性质:低频或音频放大 (LF)_开关管 (S)_视频输出 (Vi

  • 2SD669(A)封装形式:直插封装

  • 2SD669(A)极限工作电压:180V

  • 2SD669(A)最大电流允许值:1.5A

  • 2SD669(A)最大工作频率:140MHZ

  • 2SD669(A)引脚数:3

  • 2SD669(A)最大耗散功率:20W

  • 2SD669(A)放大倍数

  • 2SD669(A)图片代号:B-21

  • 2SD669(A)vtest:180

  • 2SD669(A)htest:140000000

  • 2SD669(A)atest:1.5

  • 2SD669(A)wtest:20

  • 2SD669(A)代换 2SD669(A)用什么型号代替:2SC3117,

型号 功能描述 生产厂家&企业 LOGO 操作
2SD669

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB649/A(PNP)

HitachiHitachi Semiconductor

日立日立公司

2SD669

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

WEITRON

2SD669

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

2SD669

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

东电电子

2SD669

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A(PNP) ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFElinearity APPLICATIONS ·For low-frequency power amplifier applications

SAVANTIC

2SD669

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •

MCC

美微科

2SD669

Silicon NPN transistor in a TO-126 Plastic Package.

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with 2SB649(A). Applications Low frequency power amplifier.

FOSHAN

蓝箭电子

2SD669

NPN Type Plastic Encapsulate Transistors

FEATURES Power dissipation PCM : 1mW(Tamb=25℃) Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD669

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Frequency Power Amplifier Complementary Pair with 2SB649 / 2SB649A

JIANGSU

长电科技

2SD669

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SD669

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Low frequency power amplifier complementary pair with 2SB649/A

KOOCHIN

灏展电子

2SD669

TO-252-2L Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649

DGNJDZ

南晶电子

2SD669

isc Silicon NPN Power Transistor

文件:297.75 Kbytes Page:2 Pages

ISC

无锡固电

2SD669

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

文件:138.23 Kbytes Page:4 Pages

UTC

友顺

2SD669

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

文件:126.08 Kbytes Page:4 Pages

UTC

友顺

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A(PNP) ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFElinearity APPLICATIONS ·For low-frequency power amplifier applications

SAVANTIC

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •

MCC

美微科

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Frequency Power Amplifier Complementary Pair with 2SB649 / 2SB649A

JIANGSU

长电科技

Silicon NPN transistor in a TO-126 Plastic Package

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with 2SB649(A). Applications Low frequency power amplifier.

FOSHAN

蓝箭电子

NPN Type Plastic Encapsulate Transistors

FEATURES Power dissipation PCM : 1mW(Tamb=25℃) Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

N PN SILICON TRANSISTOR

The main purpose For low-frequency power amplification.

Huashan

华汕电子器件

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Low frequency power amplifier complementary pair with 2SB649/A

KOOCHIN

灏展电子

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB649/A(PNP)

HitachiHitachi Semiconductor

日立日立公司

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

WEITRON

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •

MCC

美微科

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •

MCC

美微科

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •

MCC

美微科

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •

MCC

美微科

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

UTC

友顺

2SD669产品属性

  • 类型

    描述

  • 型号

    2SD669

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    Silicon NPN Epitaxial

更新时间:2025-8-9 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC/友顺
24+
NA/
4250
原装现货,当天可交货,原型号开票
PMC
2016+
TO-126
3500
只做原装,假一罚十,公司可开17%增值税发票!
ST
23+
SOP
30000
全新原装假一赔十
UTC/友顺
25+
SOT-89
860000
明嘉莱只做原装正品现货
HITACHI/日立
22+
TO126
100000
代理渠道/只做原装/可含税
HITACHI/日立
25+
TO126
54648
百分百原装现货 实单必成 欢迎询价
UTC/友顺
25+
SOT-89
20300
UTC/友顺原装特价2SD669G-D-AB3-R即刻询购立享优惠#长期有货
UTC
2024+
SOT-89
500000
诚信服务,绝对原装原盘
UTC
20+
SOT-89
1115
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC(友顺)
24+/25+
TO-126
200
UTC原厂一级代理商,价格优势!

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