2SD669晶体管资料
2SD669(A)别名：2SD669(A)三极管、2SD669(A)晶体管、2SD669(A)晶体三极管
2SD669(A)生产厂家：日本日立公司
2SD669(A)制作材料：Si-NPN
2SD669(A)性质：低频或音频放大 （LF）_开关管 （S）_视频输出 （Vi
2SD669(A)封装形式：直插封装
2SD669(A)极限工作电压：180V
2SD669(A)最大电流允许值：1.5A
2SD669(A)最大工作频率：140MHZ
2SD669(A)引脚数：3
2SD669(A)最大耗散功率：20W
2SD669(A)放大倍数：
2SD669(A)图片代号：B-21
2SD669(A)vtest：180
2SD669(A)htest：140000000
- 2SD669(A)atest：1.5
2SD669(A)wtest：20
2SD669(A)代换 2SD669(A)用什么型号代替：2SC3117,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SD669 | Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A(PNP) | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SD669 | NPN Epitaxial Planar Transistors NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free | WEITRON | | |
2SD669 | Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A(PNP) ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFElinearity APPLICATIONS ·For low-frequency power amplifier applications | SAVANTIC | | |
2SD669 | NPN Silicon Plastic-Encapsulate Transistor Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V • | MCC | | |
2SD669 | Silicon NPN transistor in a TO-126 Plastic Package. Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with 2SB649(A). Applications Low frequency power amplifier. | FOSHAN 蓝箭电子 | | |
2SD669 | NPN Type Plastic Encapsulate Transistors FEATURES Power dissipation PCM : 1mW（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | SECOS 喜可士 | | |
2SD669 | TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low Frequency Power Amplifier Complementary Pair with 2SB649 / 2SB649A | JIANGSU 长电科技 | | |
2SD669 | TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
2SD669 | TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Low frequency power amplifier complementary pair with 2SB649/A | KOOCHIN 灏展电子 | | |
2SD669 | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | |
2SD669 | Plastic-Encapsulated Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | | |
2SD669 | TO-252-2L Plastic-Encapsulate Transistors FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649 | DGNJDZ 南晶电子 | | |
2SD669 | isc Silicon NPN Power Transistor 文件：297.75 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SD669 | TO-126双极型晶体管 | HighDiode | | |
2SD669 | 普通三极管 | FOSAN 富信半导体 | | |
2SD669 | Bipolar Transistor | UTC 友顺 | | |
2SD669 | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 文件：138.23 Kbytes Page：4 Pages | UTC 友顺 | | |
2SD669 | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 文件：126.08 Kbytes Page：4 Pages | UTC 友顺 | | |
Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A(PNP) ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFElinearity APPLICATIONS ·For low-frequency power amplifier applications | SAVANTIC | | ||
TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low Frequency Power Amplifier Complementary Pair with 2SB649 / 2SB649A | JIANGSU 长电科技 | | ||
Silicon NPN transistor in a TO-126 Plastic Package Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with 2SB649(A). Applications Low frequency power amplifier. | FOSHAN 蓝箭电子 | | ||
NPN Type Plastic Encapsulate Transistors FEATURES Power dissipation PCM : 1mW（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | SECOS 喜可士 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A(PNP) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
NPN Epitaxial Planar Transistors NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free | WEITRON | | ||
TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Low frequency power amplifier complementary pair with 2SB649/A | KOOCHIN 灏展电子 | | ||
NPN Silicon Plastic-Encapsulate Transistor Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V • | MCC | | ||
N PN SILICON TRANSISTOR The main purpose For low-frequency power amplification. | HUASHAN 华汕电子器件 | | ||
NPN Silicon Plastic-Encapsulate Transistor Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V • | MCC | | ||
NPN Silicon Plastic-Encapsulate Transistor Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V • | MCC | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
NPN Silicon Plastic-Encapsulate Transistor Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V • | MCC | | ||
NPN Silicon Plastic-Encapsulate Transistor Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V • | MCC | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | | ||
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A | UTC 友顺 | |
2SD669产品属性
- 类型
描述
- PCM(W)：
1
- IC(A)：
1.5
- VCBO(V)：
180
- VCEO(V)：
120
- VEBO(V)：
5
- hFEMin：
60
- hFEMax：
320
- hFE@VCE(V)：
5
- hFE@IC(A)：
0.15
- VCE(sat)(V)：
1
- VCE(sat)\u001E@IC(A)：
0.5
- VCE(sat)\u001E@IB(A)：
0.05
- Package：
TO-126
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
25+ |
SOT-89 |
20300 |
UTC/友顺原装特价2SD669G-D-AB3-R即刻询购立享优惠#长期有货 |
|||
NEC |
26+ |
TO-126 |
9896 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
CJ/长电 |
25+ |
TO-126 |
20000 |
原装 |
|||
HSMC |
18+ |
TO-126F |
85600 |
保证进口原装可开17%增值税发票 |
|||
HITACHI/日立 |
24+ |
TO220 |
4850 |
大批量供应优势库存热卖 |
|||
HIT |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
CJ/长电 |
21+ |
TO-126 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
长电 |
25+23+ |
TO-126 |
23944 |
绝对原装正品全新进口深圳现货 |
|||
CJ/长晶 |
2025+ |
TO126 |
3000 |
原装进口价格优 请找坤融电子! |
|||
HIT |
24+ |
TO-92 |
20000 |
2SD669芯片相关品牌
2SD669规格书下载地址
2SD669参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SD692
- 2SD691
- 2SD690
- 2SD689
- 2SD688
- 2SD687
- 2SD686
- 2SD684
- 2SD683
- 2SD681A
- 2SD681
- 2SD680A
- 2SD680
- 2SD68
- 2SD679A
- 2SD679
- 2SD678A
- 2SD678
- 2SD677
- 2SD676(A)
- 2SD676
- 2SD675(A)
- 2SD675
- 2SD674(A)
- 2SD673A
- 2SD673(A)
- 2SD673
- 2SD672
- 2SD671
- 2SD670(H)
- 2SD670
- 2SD67
- 2SD669D
- 2SD669C
- 2SD669B
- 2SD669A
- 2SD669(A)
- 2SD668(A)
- 2SD667L
- 2SD667A
- 2SD667(A)
- 2SD667
- 2SD666A
- 2SD666(A)
- 2SD666
- 2SD665
- 2SD664
- 2SD663
- 2SD662B
- 2SD662
- 2SD661A
- 2SD661
- 2SD660
- 2SD66
- 2SD658
- 2SD657
- 2SD656
- 2SD655
- 2SD654
- 2SD652
- 2SD651(H)
- 2SD651
- 2SD650(H)
- 2SD650
- 2SD649
- 2SD648A
- 2SD647A
- 2SD641
2SD669数据表相关新闻
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2019-2-15
DdatasheetPDF页码索引
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