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位置：首页 > IC中文资料第12429页 > 2SD66

2SD66晶体管资料

  • 2SD66别名：2SD66三极管、2SD66晶体管、2SD66晶体三极管

  • 2SD66生产厂家：日本索尼公司

  • 2SD66制作材料：Ge-NPN

  • 2SD66性质：低频或音频放大 （LF）_开关管 （S）

  • 2SD66封装形式：直插封装

  • 2SD66极限工作电压：25V

  • 2SD66最大电流允许值：0.1A

  • 2SD66最大工作频率：<1MHZ或未知

  • 2SD66引脚数：3

  • 2SD66最大耗散功率：0.12W

  • 2SD66放大倍数：

  • 2SD66图片代号：C-62

  • 2SD66vtest：25

  • 2SD66htest：999900

  • 2SD66atest：.1

  • 2SD66wtest：.12

  • 2SD66代换 2SD66用什么型号代替：AC127,AC176,AC178,2N1302,2SD30,3BX31B,

型号 功能描述 生产厂家&企业 LOGO 操作
2SD661

SiliconPNPepitaxialplanertype(Forlow-frequencyandlow-noiseamplification)

Forlow-frequencyandlow-noiseamplification Complementaryto2SD661and2SD661A ■Features ●LownoisevoltageNV. ●HighfowardcurrenttransferratiohFE. ●Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboar

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD661

SiliconNPNepitaxialplanertype(Forlow-frequencyandlow-noiseamplification)

Forlow-frequencyandlow-noiseamplification ■Features ●LownoisevoltageNV. ●HighfowardcurrenttransferratiohFE ●Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD661A

SiliconNPNepitaxialplanertype(Forlow-frequencyandlow-noiseamplification)

Forlow-frequencyandlow-noiseamplification ■Features ●LownoisevoltageNV. ●HighfowardcurrenttransferratiohFE ●Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD661A

SiliconPNPepitaxialplanertype(Forlow-frequencyandlow-noiseamplification)

Forlow-frequencyandlow-noiseamplification Complementaryto2SD661and2SD661A ■Features ●LownoisevoltageNV. ●HighfowardcurrenttransferratiohFE. ●Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboar

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD662

SiliconNPNepitaxialplanertype(Forhighbreakdownvoltagegeneralamplification)

Forhighbreakdownvoltagegeneralamplification ■Features •Highcollector-emittervoltage(Baseopen)VCEO •HightransitionfrequencyfT •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD662

ForHighBreakdownVoltageGeneralAmplification

Forhighbreakdownvoltagegeneralamplification ■Features •Highcollector-emittervoltage(Baseopen)VCEO •HightransitionfrequencyfT •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD662B

SiliconNPNepitaxialplanertype(Forhighbreakdownvoltagegeneralamplification)

Forhighbreakdownvoltagegeneralamplification ■Features •Highcollector-emittervoltage(Baseopen)VCEO •HightransitionfrequencyfT •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD662B

ForHighBreakdownVoltageGeneralAmplification

Forhighbreakdownvoltagegeneralamplification ■Features •Highcollector-emittervoltage(Baseopen)VCEO •HightransitionfrequencyfT •Mtypepackageallowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SD664

HIGHPOWERSWITCHINGAPPLICATIONS.

FEATURES: -HighDCCurrentGain :hyp-2000(Min.)(VCE3V,Ic=3A) -LowSaturationVoltage :VCE(sat)=1.5V(Max.)(IC-3A) -MonolithicCnstructionwithBuilt-InBase- EmitterShuntResistor.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD665

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Complementtotype2SB645 ·Highpowerdissipation APPLICATIONS ·Poweramplifierapplications ·Powerswitchingapplications ·DC-DCconverters

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD665

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3package ·Complementtotype2SB645 ·Highpowerdissipation APPLICATIONS ·Poweramplifierapplications ·Powerswitchingapplications ·DC-DCconverters

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD666

LOWFREQUENCYHIGHVOLTAGEAMPLIFIERComplementarypairwith2SB646/A

LOWFREQUENCYHIGHVOLTAGEAMPLIFIERComplementarypairwith2SB646/A

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD666A

LOWFREQUENCYHIGHVOLTAGEAMPLIFIERComplementarypairwith2SB646/A

LOWFREQUENCYHIGHVOLTAGEAMPLIFIERComplementarypairwith2SB646/A

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD667

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD667

TO-92MODPlastic-EncapsulateTransistors

FEATURES eLowFrequencyPowerAmplifier eComplementaryPairwith2SB647/A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD667

SiliconNPNEpitaxial

1.Lowfrequencypoweramplifier 2.Complementarypairwith2SB647/A

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD667A

SiliconNPNEpitaxial

1.Lowfrequencypoweramplifier 2.Complementarypairwith2SB647/A

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD667A

TO-92MODPlastic-EncapsulateTransistors

FEATURES eLowFrequencyPowerAmplifier eComplementaryPairwith2SB647/A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD667A

1A,120VNPNPlasticEncapsulatedTransistor

FEATURES •LowFrequencyPowerAmplifier •ComplementaryPairwith2SB647A

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SD667A

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforlowfrequencypoweramplifierapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
2SD667A-B

NPNSiliconPlastic-EncapsulateTransistor

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Capableof0.9WattsofPowerDissipation. •Collector-current1.0A •Collector-baseVoltage120V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •Halogenfreeavailableuponrequestby

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SD667ABTZ-E

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD667A-C

NPNSiliconPlastic-EncapsulateTransistor

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Capableof0.9WattsofPowerDissipation. •Collector-current1.0A •Collector-baseVoltage120V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •Halogenfreeavailableuponrequestby

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SD667ACTZ-E

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD667A-D

NPNSiliconPlastic-EncapsulateTransistor

Features •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Capableof0.9WattsofPowerDissipation. •Collector-current1.0A •Collector-baseVoltage120V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •Halogenfreeavailableuponrequestby

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SD667BTZ-E

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD667CTZ-E

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD667DTZ-E

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB647/A

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD667-TA

TO-92MODPlastic-EncapsulateTransistors

FEATURES eLowFrequencyPowerAmplifier eComplementaryPairwith2SB647/A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD669

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Lowfrequencypoweramplifiercomplementarypair with2SB649/A

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2SD669

TO-252-2LPlastic-EncapsulateTransistors

FEATURES LowFrequencyPowerAmplifierComplementary Pairwith2SB649

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD669

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowFrequencyPowerAmplifierComplementaryPairwith2SB649/2SB649A

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SD669

TRANSISTOR(NPN)

FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SD669

NPNSiliconPlastic-EncapsulateTransistor

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1WattsofPowerDissipation. •Collector-current1.5A •Collector-baseVoltage180V •

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SD669

NPNTypePlasticEncapsulateTransistors

FEATURES PowerdissipationPCM:1mW（Tamb=25℃） CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V Collector-emittervoltageVCEO2SD669:120V2SD669A:160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SD669

SiliconNPNtransistorinaTO-126PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features Complementarypairwith2SB649(A). Applications Lowfrequencypoweramplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SD669

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD669

SiliconNPNEpitaxial

Application Lowfrequencypoweramplifiercomplementarypairwith2SB649/A(PNP)

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD669

NPNEpitaxialPlanarTransistors

NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
2SD669

BIPOLARPOWERGENERALPURPOSETRANSISTOR

NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SD669

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2SD669A

SiliconNPNEpitaxial

Application Lowfrequencypoweramplifiercomplementarypairwith2SB649/A(PNP)

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD669A

NPNEpitaxialPlanarTransistors

NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
2SD669A

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD669A

NPNTypePlasticEncapsulateTransistors

FEATURES PowerdissipationPCM:1mW（Tamb=25℃） CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V Collector-emittervoltageVCEO2SD669:120V2SD669A:160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SD669A

SiliconNPNtransistorinaTO-126PlasticPackage

Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features Complementarypairwith2SB649(A). Applications Lowfrequencypoweramplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SD669A

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowFrequencyPowerAmplifierComplementaryPairwith2SB649/2SB649A

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SD669A

NPNSiliconPlastic-EncapsulateTransistor

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1WattsofPowerDissipation. •Collector-current1.5A •Collector-baseVoltage180V •

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SD669A

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Lowfrequencypoweramplifiercomplementarypair with2SB649/A

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2SD669A

NPNSILICONTRANSISTOR

Themainpurpose Forlow-frequencypoweramplification.

HuashanHuashan Electronic Devices Co

华汕电子器件

Huashan
2SD669AB

NPNSiliconPlastic-EncapsulateTransistor

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1WattsofPowerDissipation. •Collector-current1.5A •Collector-baseVoltage180V •

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SD669A-B

NPNSiliconPlastic-EncapsulateTransistor

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1WattsofPowerDissipation. •Collector-current1.5A •Collector-baseVoltage180V •

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SD669A-B-AA3-K

BIPOLARPOWERGENERALPURPOSETRANSISTOR

NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SD669A-B-AA3-R

BIPOLARPOWERGENERALPURPOSETRANSISTOR

NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SD669A-B-AA3-T

BIPOLARPOWERGENERALPURPOSETRANSISTOR

NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SD669A-B-AB3-K

BIPOLARPOWERGENERALPURPOSETRANSISTOR

NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SD669A-B-AB3-R

BIPOLARPOWERGENERALPURPOSETRANSISTOR

NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SD669A-B-AB3-T

BIPOLARPOWERGENERALPURPOSETRANSISTOR

NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SD669A-B-T60-K

BIPOLARPOWERGENERALPURPOSETRANSISTOR

NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SD669A-B-T60-R

BIPOLARPOWERGENERALPURPOSETRANSISTOR

NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2SD66产品属性

  • 类型

    描述

  • 型号

    2SD66

  • 制造商

    PANASONIC

  • 制造商全称

    Panasonic Semiconductor

  • 功能描述

    Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

2SD66供应商更多...

更新时间：2024-4-24 14:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市亚泰盈科电子有限公司
2SD667
HIT
TO-92L
27413
只做原装货值得信赖
询价
深圳市昊创电子有限公司
2SD665
TOSHIBA/东芝
专业铁帽
TO-3
100
原装铁帽专营,代理渠道量大可订货
询价
深圳市艾宇特电子科技有限公司
2SD662B-Q
PANASONIC/松下
2048+
TO-92
9852
只做原装正品现货!或订货假一赔十!
询价
上海磐岳电子有限公司
2SD666A-C
HITACHI
2023+
TO-92L
58000
进口原装,现货热卖
询价
深圳市弘为电子有限公司
2SD665
TOSHIBA
16+
TO-3
1200
原装现货假一罚十
询价
深圳市向鸿伟业电子有限公司
2SD666A
HITACHI
1689
进口原装-真实库存-价实
询价
深圳市明嘉莱科技有限公司
2SD666A
HITACHI/日立
23+
NA
880000
明嘉莱只做原装正品现货
询价
无锡固电半导体股份有限公司
2SD665
isc
2024
TO-3
6000
国产品牌isc,可替代原装
询价
深圳市百视威讯电子科技有限公司
2SD666A
23+
N/A
90750
正品授权货源可靠
询价
中天科工半导体（深圳）有限公司
2SD665
TOSHIBA/东芝
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价

2SD66芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
  • GLENAIR
  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

2SD66规格书下载地址

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