Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A ■Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boar

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification ■Features ● Low noise voltage NV. ● High foward current transfer ratio hFE ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification ■Features ● Low noise voltage NV. ● High foward current transfer ratio hFE ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A ■Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boar

Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)

For high breakdown voltage general amplification ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

For High Breakdown Voltage General Amplification

For high breakdown voltage general amplification ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)

For high breakdown voltage general amplification ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

For High Breakdown Voltage General Amplification

For high breakdown voltage general amplification ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

HIGH POWER SWITCHING APPLICATIONS.

FEATURES: -High DC Current Gain : hyp-2000 (Min.) (VCE 3V, Ic=3A) -Low Saturation Voltage : VCE(sat)=1.5V (Max.) (IC-3A) -Monolithic Cnstruction with Built-In Base- Emitter Shunt Resistor.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2SB645 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2SB645 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A

LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB647/A

TO-92MOD Plastic-Encapsulate Transistors

FEATURES e Low Frequency Power Amplifier e Complementary Pair with 2SB647/A

Silicon NPN Epitaxial

1. Low frequency power amplifier 2. Complementary pair with 2SB647/A

Silicon NPN Epitaxial

1. Low frequency power amplifier 2. Complementary pair with 2SB647/A

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for low frequency power amplifier applications.

TO-92MOD Plastic-Encapsulate Transistors

FEATURES e Low Frequency Power Amplifier e Complementary Pair with 2SB647/A

1A , 120V NPN Plastic Encapsulated Transistor

FEATURES • Low Frequency Power Amplifier • Complementary Pair with 2SB647A

NPN Silicon Plastic-Encapsulate Transistor

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB647/A

NPN Silicon Plastic-Encapsulate Transistor

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB647/A

NPN Silicon Plastic-Encapsulate Transistor

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB647/A

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB647/A

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB647/A

TO-92MOD Plastic-Encapsulate Transistors

FEATURES e Low Frequency Power Amplifier e Complementary Pair with 2SB647/A

TO-252-2L Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Frequency Power Amplifier Complementary Pair with 2SB649 / 2SB649A

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Low frequency power amplifier complementary pair with 2SB649/A

Silicon NPN transistor in a TO-126 Plastic Package.

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with 2SB649(A). Applications Low frequency power amplifier.

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •

NPN Type Plastic Encapsulate Transistors

FEATURES Power dissipation PCM : 1mW（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A(PNP) ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFElinearity APPLICATIONS ·For low-frequency power amplifier applications

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB649/A(PNP)

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB649/A(PNP)

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A(PNP) ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFElinearity APPLICATIONS ·For low-frequency power amplifier applications

Silicon NPN transistor in a TO-126 Plastic Package

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with 2SB649(A). Applications Low frequency power amplifier.

NPN Type Plastic Encapsulate Transistors

FEATURES Power dissipation PCM : 1mW（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Frequency Power Amplifier Complementary Pair with 2SB649 / 2SB649A

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Low frequency power amplifier complementary pair with 2SB649/A

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •

N PN SILICON TRANSISTOR

The main purpose For low-frequency power amplification.

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •

NPN Silicon Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A