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2SD66晶体管资料

2SD66别名：2SD66三极管、2SD66晶体管、2SD66晶体三极管
2SD66生产厂家：日本索尼公司
2SD66制作材料：Ge-NPN
2SD66性质：低频或音频放大（LF）_开关管（S）
2SD66封装形式：直插封装
2SD66极限工作电压：25V
2SD66最大电流允许值：0.1A
2SD66最大工作频率：<1MHZ或未知
2SD66引脚数：3
2SD66最大耗散功率：0.12W
2SD66放大倍数：
2SD66图片代号：C-62
2SD66vtest：25
2SD66htest：999900
2SD66atest：0.1
2SD66wtest：0.12

2SD66代换 2SD66用什么型号代替：AC127,AC176,AC178,2N1302,2SD30,3BX31B,

型号	功能描述	生产厂家企业	LOGO
2SD661	Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A ■Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boar	PANASONIC 松下	PANASONIC
2SD661	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) For low-frequency and low-noise amplification ■Features ● Low noise voltage NV. ● High foward current transfer ratio hFE ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.	PANASONIC 松下	PANASONIC
2SD661A	Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A ■Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boar	PANASONIC 松下	PANASONIC
2SD661A	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) For low-frequency and low-noise amplification ■Features ● Low noise voltage NV. ● High foward current transfer ratio hFE ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.	PANASONIC 松下	PANASONIC
2SD662	Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) For high breakdown voltage general amplification ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.	PANASONIC 松下	PANASONIC
2SD662	For High Breakdown Voltage General Amplification For high breakdown voltage general amplification ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.	PANASONIC 松下	PANASONIC
2SD662B	For High Breakdown Voltage General Amplification For high breakdown voltage general amplification ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.	PANASONIC 松下	PANASONIC
2SD662B	Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) For high breakdown voltage general amplification ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.	PANASONIC 松下	PANASONIC
2SD664	HIGH POWER SWITCHING APPLICATIONS. FEATURES: -High DC Current Gain : hyp-2000 (Min.) (VCE 3V, Ic=3A) -Low Saturation Voltage : VCE(sat)=1.5V (Max.) (IC-3A) -Monolithic Cnstruction with Built-In Base- Emitter Shunt Resistor.	TOSHIBA 东芝	TOSHIBA
2SD665	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SB645 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters	ISC 无锡固电	ISC
2SD665	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SB645 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters	SAVANTIC	SAVANTIC
2SD666	LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD666A	LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD666AB	LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD667	丝印代码：D667；TO-92MOD Plastic-Encapsulate Transistors FEATURES e Low Frequency Power Amplifier e Complementary Pair with 2SB647/A	DGNJDZ 南晶电子	DGNJDZ
2SD667	Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A	RENESAS 瑞萨	RENESAS
2SD667	Silicon NPN Epitaxial 1. Low frequency power amplifier 2. Complementary pair with 2SB647/A	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD667A	Silicon NPN Epitaxial 1. Low frequency power amplifier 2. Complementary pair with 2SB647/A	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD667A	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications.	DCCOM 道全	DCCOM
2SD667A	1A , 120V NPN Plastic Encapsulated Transistor FEATURES • Low Frequency Power Amplifier • Complementary Pair with 2SB647A	SECOS 喜可士	SECOS
2SD667A	丝印代码：D667A；TO-92MOD Plastic-Encapsulate Transistors FEATURES e Low Frequency Power Amplifier e Complementary Pair with 2SB647/A	DGNJDZ 南晶电子	DGNJDZ
2SD667A-B	NPN Silicon Plastic-Encapsulate Transistor Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by	MCC	MCC
2SD667ABTZ-E	Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A	RENESAS 瑞萨	RENESAS
2SD667A-C	NPN Silicon Plastic-Encapsulate Transistor Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by	MCC	MCC
2SD667ACTZ-E	Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A	RENESAS 瑞萨	RENESAS
2SD667A-D	NPN Silicon Plastic-Encapsulate Transistor Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by	MCC	MCC
2SD667BTZ-E	Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A	RENESAS 瑞萨	RENESAS
2SD667CTZ-E	Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A	RENESAS 瑞萨	RENESAS
2SD667DTZ-E	Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A	RENESAS 瑞萨	RENESAS
2SD667-TA	丝印代码：D667；TO-92MOD Plastic-Encapsulate Transistors FEATURES e Low Frequency Power Amplifier e Complementary Pair with 2SB647/A	DGNJDZ 南晶电子	DGNJDZ
2SD669	TO-252-2L Plastic-Encapsulate Transistors FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649	DGNJDZ 南晶电子	DGNJDZ
2SD669	TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low Frequency Power Amplifier Complementary Pair with 2SB649 / 2SB649A	JIANGSU 长电科技	JIANGSU
2SD669	Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A(PNP) ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFElinearity APPLICATIONS ·For low-frequency power amplifier applications	SAVANTIC	SAVANTIC
2SD669	NPN Type Plastic Encapsulate Transistors FEATURES Power dissipation PCM : 1mW（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	SECOS 喜可士	SECOS
2SD669	Plastic-Encapsulated Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SD669	TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Low frequency power amplifier complementary pair with 2SB649/A	KOOCHIN 灏展电子	KOOCHIN
2SD669	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SD669	Silicon NPN transistor in a TO-126 Plastic Package. Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with 2SB649(A). Applications Low frequency power amplifier.	FOSHAN 蓝箭电子	FOSHAN
2SD669	NPN Epitaxial Planar Transistors NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SD669	NPN Silicon Plastic-Encapsulate Transistor Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •	MCC	MCC
2SD669	Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A(PNP)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD669	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A	UTC 友顺	UTC
2SD669A	Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A(PNP)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD669A	N PN SILICON TRANSISTOR The main purpose For low-frequency power amplification.	HUASHAN 华汕电子器件	HUASHAN
2SD669A	NPN Silicon Plastic-Encapsulate Transistor Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •	MCC	MCC
2SD669A	TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low Frequency Power Amplifier Complementary Pair with 2SB649 / 2SB649A	JIANGSU 长电科技	JIANGSU
2SD669A	NPN Epitaxial Planar Transistors NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SD669A	Silicon NPN transistor in a TO-126 Plastic Package Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with 2SB649(A). Applications Low frequency power amplifier.	FOSHAN 蓝箭电子	FOSHAN
2SD669A	TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Low frequency power amplifier complementary pair with 2SB649/A	KOOCHIN 灏展电子	KOOCHIN
2SD669A	NPN Type Plastic Encapsulate Transistors FEATURES Power dissipation PCM : 1mW（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	SECOS 喜可士	SECOS
2SD669A	Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A(PNP) ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFElinearity APPLICATIONS ·For low-frequency power amplifier applications	SAVANTIC	SAVANTIC
2SD669AB	NPN Silicon Plastic-Encapsulate Transistor Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •	MCC	MCC
2SD669A-B	NPN Silicon Plastic-Encapsulate Transistor Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 1 Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 180V •	MCC	MCC
2SD669A-B-AA3-K	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A	UTC 友顺	UTC
2SD669A-B-AA3-R	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A	UTC 友顺	UTC
2SD669A-B-AA3-T	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A	UTC 友顺	UTC
2SD669A-B-AB3-K	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A	UTC 友顺	UTC
2SD669A-B-AB3-R	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A	UTC 友顺	UTC
2SD669A-B-AB3-T	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A	UTC 友顺	UTC
2SD669A-B-T60-K	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPN SILICON TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A	UTC 友顺	UTC

2SD66产品属性

类型
描述
Polarity：
NPN
PCM(W)：
0.9
IC(A)：
1
VCBO(V)：
120
VCEO(V)：
80
VEBO(V)：
5
hFEMin：
60
hFEMax：
320
hFE@VCE(V)：
5
hFE@IC(A)：
0.15
VCE(sat)(V)：
1
VCE(sat)@IC(A)：
0.5
VCE(sat)@IB(A)：
0.05
Package：
TO-92MOD

2SD66供应商更多...

更新时间：2026-5-14 22:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海意淼电子科技有限公司	2SD669	ST	23+	SOP	30000	全新原装假一赔十	询价
中天科工半导体（深圳）有限公司	2SD669G-D-AB3-R	UTC/友顺	25+	SOT-89	20300	UTC/友顺原装特价2SD669G-D-AB3-R即刻询购立享优惠#长期有货	询价
深圳市昌和盛利电子有限公司	2SD669	NEC	26+	TO-126	9896	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市腾亿芯科技有限公司	2SD669	CJ/长电	25+	TO-126	20000	原装	询价
深圳诚思涵科技有限公司	2SD669A	HSMC	18+	TO-126F	85600	保证进口原装可开17%增值税发票	询价
深圳市粤骏腾电子科技有限公司	2SD669	HITACHI/日立	24+	TO220	4850	大批量供应优势库存热卖	询价
千层芯半导体(深圳)有限公司	2SD669	HIT	24+	SMD	20000	一级代理原装现货假一罚十	询价
深圳市凯睿晟科技有限公司	2SD669	CJ/长电	21+	TO-126	30000	百域芯优势实单必成可开13点增值税发票	询价
深圳市华斯顿科技有限公司	2SD669	长电	25+23+	TO-126	23944	绝对原装正品全新进口深圳现货	询价
深圳市坤融电子科技有限公司	2SD669A	CJ/长晶	2025+	TO126	3000	原装进口价格优请找坤融电子!	询价

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DdatasheetPDF页码索引

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P109

找IC，尽在114IC

2SD66晶体管资料

2SD66产品属性

2SD66供应商更多...

2SD66芯片相关品牌

2SD66规格书下载地址

2SD66参数引脚图相关

2SD66数据表相关新闻

2SD667L-TO92NLB-C-TG_UTC代理商

2SD1898G-SOT89R-Q-TG_UTC代理商

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DdatasheetPDF页码索引