Silicon NPN Epitaxial

1. Low frequency power amplifier 2. Complementary pair with 2SB647/A

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for low frequency power amplifier applications.

1A , 120V NPN Plastic Encapsulated Transistor

FEATURES • Low Frequency Power Amplifier • Complementary Pair with 2SB647A

TO-92MOD Plastic-Encapsulate Transistors

FEATURES e Low Frequency Power Amplifier e Complementary Pair with 2SB647/A

TO-92L Transistor (NPN)

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Silicon NPN transistor in a TO-92LM Plastic Package

文件：903.2 Kbytes Page：6 Pages

TRANSISTOR (NPN)

文件：279.87 Kbytes Page：3 Pages

Small Signal Transistor

双极型晶体管

晶体管

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB647/A

Silicon NPN Epitaxial

1. Low frequency power amplifier 2. Complementary pair with 2SB647/A

Silicon NPN transistor in a TO-92LM Plastic Package

文件：903.2 Kbytes Page：6 Pages

TRANSISTOR (NPN)

文件：279.87 Kbytes Page：3 Pages

SILICON NPN EPITAXIAL

文件：195.37 Kbytes Page：4 Pages

NPN Silicon Plastic-Encapsulate Transistor

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB647/A

NPN Silicon Plastic-Encapsulate Transistor

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB647/A

NPN Silicon Plastic-Encapsulate Transistor

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by

NPN Plastic Encapsulated Transistor

文件：510.97 Kbytes Page：3 Pages

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：带盒（TB） 描述：TRANS NPN 100V 1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：散装 描述：TRANS NPN 100V 1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个