| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SD667A | Silicon NPN Epitaxial 1. Low frequency power amplifier 2. Complementary pair with 2SB647/A | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SD667A | 丝印代码：D667A；TO-92MOD Plastic-Encapsulate Transistors FEATURES e Low Frequency Power Amplifier e Complementary Pair with 2SB647/A | DGNJDZ 南晶电子 | | |
2SD667A | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. | DCCOM 道全 | | |
2SD667A | 1A , 120V NPN Plastic Encapsulated Transistor FEATURES • Low Frequency Power Amplifier • Complementary Pair with 2SB647A | SECOS 喜可士 | | |
2SD667A | TO-92L Transistor (NPN) 文件：791.4 Kbytes Page：3 Pages | LUGUANG 鲁光电子 | | |
2SD667A | TRANSISTOR (NPN) 文件：279.87 Kbytes Page：3 Pages | KOOCHIN 灏展电子 | | |
2SD667A | Silicon NPN transistor in a TO-92LM Plastic Package 文件：903.2 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | |
2SD667A | Small Signal Transistor | SECOS 喜可士 | | |
2SD667A | 双极型晶体管 | LUGUANG 鲁光电子 | | |
2SD667A | 晶体管 | JSCJ 长晶科技 | | |
NPN Silicon Plastic-Encapsulate Transistor Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by | MCC | | ||
Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A | RENESAS 瑞萨 | | ||
NPN Silicon Plastic-Encapsulate Transistor Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by | MCC | | ||
Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A | RENESAS 瑞萨 | | ||
NPN Silicon Plastic-Encapsulate Transistor Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 120V • Operating and storage junction temperature range: -55°C to +150°C • Halogen free available upon request by | MCC | | ||
NPN Plastic Encapsulated Transistor 文件：510.97 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：带盒（TB） 描述：TRANS NPN 100V 1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MCC | | ||
封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：散装 描述：TRANS NPN 100V 1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MCC | | ||
Silicon NPN Epitaxial 1. Low frequency power amplifier 2. Complementary pair with 2SB647/A | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A | RENESAS 瑞萨 | |
2SD667A产品属性
- 类型
描述
- NPN/PNP：
NPN
- VCEO (V)：
100
- IC (A) @25 °C：
1
- hFE最小值：
60
- hFE最大值：
200
- Pc (W)：
0.9
- fT (GHz) 典型值：
0.14
- 封装类型：
TO-92Mod
- 订购条件：
Large order only
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIT |
24+ |
8PDIP |
58480 |
||||
HITACHI/日立 |
25+ |
TO-92L |
15000 |
本公司 只做全新原装正品 |
|||
HITACHI/日立 |
25+ |
TO92L |
15000 |
全新原装现货,价格优势 |
|||
HITACHI/日立 |
25+ |
TO-92L |
32360 |
HITACHI/日立全新特价2SD667AC即刻询购立享优惠#长期有货 |
|||
HIT |
24+ |
T-92L |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
进口RENESAS |
25+ |
TO-92L |
66880 |
原装正品，欢迎询价 |
|||
蓝箭 |
14+ |
TO-92LM |
3015 |
全新 发货1-2天 |
|||
CJ/长电 |
24+ |
TO-92MOD |
50000 |
只做原装，欢迎询价，量大价优 |
|||
HIT |
17+ |
TO-92L |
6200 |
100%原装正品现货 |
|||
CJ |
26+ |
QFN24 |
86720 |
全新原装正品价格最实惠 假一赔百 |
2SD667A规格书下载地址
2SD667A参数引脚图相关
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2019-2-15
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