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2SD60晶体管资料
2SD60别名:2SD60三极管、2SD60晶体管、2SD60晶体三极管
2SD60生产厂家:日本三菱公司
2SD60制作材料:Si-NPN
2SD60性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SD60封装形式:直插封装
2SD60极限工作电压:150V
2SD60最大电流允许值:6A
2SD60最大工作频率:<1MHZ或未知
2SD60引脚数:2
2SD60最大耗散功率:50W
2SD60放大倍数:
2SD60图片代号:E-44
2SD60vtest:150
2SD60htest:999900
- 2SD60atest:6
2SD60wtest:50
2SD60代换 2SD60用什么型号代替:BD245D,BDX11,BDY19,BDY74,2N3442,2N3773,2SD551,2SD732,3DD62E,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
100V/120V,1ALow-FrequencyPowerAmpApplications 1.HighbreakdownvoltageVCEO100/120V,Highcurrent1A. 2.Lowsaturationvoltage,excellenthFElinearity. | SANYOSanyo 三洋三洋电机株式会社 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerAmplifierApplications 100V/120V,1ALow-FrequencyPowerAmplifierApplications Features ·HighbreakdownvoltageVCEO100/120V,Highcurrent1A. ·Lowsaturationvoltage,excellenthFElinearity. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PowerAmplifierApplications 100V/120V,1ALow-FrequencyPowerAmplifierApplications Features ·HighbreakdownvoltageVCEO100/120V,Highcurrent1A. ·Lowsaturationvoltage,excellenthFElinearity. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
100V/120V,1ALow-FrequencyPowerAmpApplications 1.HighbreakdownvoltageVCEO100/120V,Highcurrent1A. 2.Lowsaturationvoltage,excellenthFElinearity. | SANYOSanyo 三洋三洋电机株式会社 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
NPNPlastic-EncapsulateTransistor FEATURES Powerdissipation PCM:0.2W(TAMB=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:60V OperatingandstoragejunctiontemperaturerangeTJ,TSTG:-55℃to+150℃ | SECOS SeCoS Halbleitertechnologie GmbH | |||
SiliconNPNepitaxialplanertype SiliconNPNepitaxialplanartype Forgeneralamplification Complementaryto2SB0709A(2SB709A) ■Features •HighfowardcurrenttransferratiohFE •LowcollectortoemittersaturationvoltageVCE(sat) •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthrough | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPepitaxialplanertype ForgeneralamplificationComplementaryto2SB0709A(2SB709A) ■Features •HighfowardcurrenttransferratiohFE •LowcollectortoemittersaturationvoltageVCE(sat) •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazine | PanasonicPanasonic Corporation 松下松下电器 | |||
SOT-23Plastic-EncapsulateTransistors FEATURE HighhFE LowVCE(sat) Forgeneralamplification Complementaryto2SB709A | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=50V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.3V(Max)@IC=0.1A APPLICATIONS ·SwitchingRegulators ·Converters ·PowerAmplifiers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconNPNepitaxialplanartype SiliconNPNepitaxialplanartype Forgeneralamplification ■Features •Twoelementsincorporatedintoonepackage(Base-coupledtransistors) •Reductionofthemountingareaandassemblycostbyonehalf | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNDIFFUSEDJUNCTIONMESA 2SD389,2SD389A SiNPNDiffusedJuctionMesa MediumPowerAmplifier. Features ●LargePc ●Wideareaofsafeoperation(ASO) 2SD601,2SD601A SiNPNEpitaxialPlanar GeneralAmplifier ComplementaryPairwith2SB709,2SB709A Features ●HighhFE ●LowVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 | |||
SiNPNTripleDiffusedJunctionMesa
| PanasonicPanasonic Corporation 松下松下电器 | |||
NPNPlastic-EncapsulateTransistor FEATURE •LowcollectortoemittersaturationvoltageVCE(sat) | SECOS SeCoS Halbleitertechnologie GmbH | |||
SiliconNPNEpitaxialPlanarType Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconNPNepitaxialplanertype Forgeneralamplification Complementaryto2SB710and2SB710A Features 1.LowcollectortoemittersaturationvoltageVCE(sat). 2.Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking. | PanasonicPanasonic Corporation 松下松下电器 | |||
TRANSISTOR(NPN) FEATURES ●LowCollectortoEmitterSaturationVoltage ●MiniTypePackage | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
SOT-23Plastic-EncapsulateTransistors FEATURES LowCollectortoEmitterSaturationVoltage MiniTypePackage | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Complementarypairwith2SB710(A)。 Applications Generalpoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowCollectortoEmitterSaturationVoltage ●MiniTypePackage | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Complementarypairwith2SB710(A)。 Applications Generalpoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowCollectortoEmitterSaturationVoltage ●MiniTypePackage | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
SiliconEpitaxialPlanarTransistor FEATURES ●Complementaryto2SB710APNPTransistor ●LowcollectortoemittersaturationvoltageVCE(sat) APPLICATIONS ●Generalpurposeamplifierapplications | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
SOT-23Plastic-EncapsulateTransistors FEATURES LowCollectortoEmitterSaturationVoltage MiniTypePackage | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SiliconNPNEpitaxialPlanarType Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconNPNepitaxialplanertype Forgeneralamplification Complementaryto2SB710and2SB710A Features 1.LowcollectortoemittersaturationvoltageVCE(sat). 2.Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking. | PanasonicPanasonic Corporation 松下松下电器 | |||
TRANSISTOR(NPN) FEATURES ●LowCollectortoEmitterSaturationVoltage ●MiniTypePackage | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
NPNPlastic-EncapsulateTransistor FEATURE •LowcollectortoemittersaturationvoltageVCE(sat) | SECOS SeCoS Halbleitertechnologie GmbH | |||
SiNPNTripleDiffusedJunctionMesa
| PanasonicPanasonic Corporation 松下松下电器 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=160V(Min) •ComplementtoType2SB628 APPLICATIONS •Designedforaudiofrequencypoweramplifierandlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
100V/120V,1ALow-FrequencyPowerAmplifierApplications 文件:126.37 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
100V/120V,1ALow-FrequencyPowerAmplifierApplications 文件:126.37 Kbytes Page:4 Pages | SANYOSanyo 三洋三洋电机株式会社 | |||
SiliconNPNtransistorinaTO-126FPlasticPackage. 文件:437.8 Kbytes Page:6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SiliconNPNtransistorinaSOT-23PlasticPackage 文件:803.33 Kbytes Page:6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
NPNPlastic-EncapsulateTransistor 文件:58.7 Kbytes Page:1 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
SiliconNPNEpitaxialPlanerType 文件:38.05 Kbytes Page:1 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
NPNPlastic-EncapsulateTransistor 文件:58.7 Kbytes Page:1 Pages | SECOS SeCoS Halbleitertechnologie GmbH |
2SD60产品属性
- 类型
描述
- 型号
2SD60
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
100V/120V, 1A Low-Frequency Power Amp Applications
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PANASONIC |
23+ |
ST23-3 |
20000 |
原厂原装正品现货 |
|||
PANASONIC |
06+07+ |
SOT23 |
4370 |
全新原装进口自己库存优势 |
|||
PANASONIC/松下 |
21+ |
SOT-23 |
2900 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
松下 |
1305+ |
SOT-23 |
12000 |
||||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
PANASON/松下 |
23+ |
NA/ |
44700 |
原装现货,当天可交货,原型号开票 |
|||
长电 |
2022+ |
SOT-23 |
7300 |
原装现货 |
|||
PAN |
1715+ |
SOP |
251156 |
只做原装正品现货假一赔十! |
|||
PANASONIC/松下 |
2022 |
SOT-23 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
PANASONIC |
2023+ |
SOT23 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
2SD60规格书下载地址
2SD60参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
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- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SD628
- 2SD627
- 2SD621
- 2SD617
- 2SD613P
- 2SD613
- 2SD612K
- 2SD612
- 2SD611A
- 2SD611
- 2SD610
- 2SD61
- 2SD608A
- 2SD608
- 2SD606
- 2SD605(D)
- 2SD605
- 2SD604
- 2SD603
- 2SD602A
- 2SD602
- 2SD601S
- 2SD601R
- 2SD601Q
- 2SD601A
- 2SD601
- 2SD600K
- 2SD600
- 2SD599
- 2SD598
- 2SD597
- 2SD596A
- 2SD596
- 2SD594
- 2SD593
- 2SD592A(ANC)
- 2SD592A
- 2SD592(NC)
- 2SD592
- 2SD591
- 2SD590
- 2SD59
- 2SD589
- 2SD588(A)
- 2SD587(A)
- 2SD586(A)
- 2SD585
- 2SD583
- 2SD582A
- 2SD582(A)
- 2SD582
- 2SD581(A)
- 2SD581
- 2SD580
- 2SD577
- 2SD575
- 2SD571
- 2SD5703
- 2SD5702
- 2SD570
- 2SD569
- 2SD568
- 2SD560
- 2SD557
- 2SD556
2SD60数据表相关新闻
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2SD1859TV2R中文资料
2019-2-15
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