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2SD60晶体管资料

2SD60别名：2SD60三极管、2SD60晶体管、2SD60晶体三极管
2SD60生产厂家：日本三菱公司
2SD60制作材料：Si-NPN
2SD60性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SD60封装形式：直插封装
2SD60极限工作电压：150V
2SD60最大电流允许值：6A
2SD60最大工作频率：<1MHZ或未知
2SD60引脚数：2
2SD60最大耗散功率：50W
2SD60放大倍数：
2SD60图片代号：E-44
2SD60vtest：150
2SD60htest：999900
2SD60atest：6
2SD60wtest：50

2SD60代换 2SD60用什么型号代替：BD245D,BDX11,BDY19,BDY74,2N3442,2N3773,2SD551,2SD732,3DD62E,

型号	功能描述	生产厂家企业	LOGO
2SD600	Power Amplifier Applications 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.	ONSEMI 安森美半导体	ONSEMI
2SD600	100V/120V, 1A Low-Frequency Power Amp Applications 1. High breakdown voltage V CEO 100/120V, High current 1A. 2. Low saturation voltage, excellent hFElinearity.	SANYO 三洋	SANYO
2SD600	isc Silicon NPN Power Transistor DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications	ISC 无锡固电	ISC
2SD600	Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications	ISC 无锡固电	ISC
2SD600	Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications	SAVANTIC	SAVANTIC
2SD600K	Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications	SAVANTIC	SAVANTIC
2SD600K	Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications	ISC 无锡固电	ISC
2SD600K	100V/120V, 1A Low-Frequency Power Amp Applications 1. High breakdown voltage V CEO 100/120V, High current 1A. 2. Low saturation voltage, excellent hFElinearity.	SANYO 三洋	SANYO
2SD600K	Power Amplifier Applications 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.	ONSEMI 安森美半导体	ONSEMI
2SD601	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601A	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601A	Silicon NPN epitaxial planer type Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through	PANASONIC 松下	PANASONIC
2SD601A	Silicon PNP epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine	PANASONIC 松下	PANASONIC
2SD601A	Silicon Epitaxial Planar Transistor FEATURES z Mini type package. z Complementary to 2SB709A PNP Transistor. z Low collector to emitter saturation voltage VCE(sat). z High forward current transfer ratio hFE. APPLICATIONS z General purpose amplifier applications.	BILIN 银河微电	BILIN
2SD601A	Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.3V(Max) @IC=0.1A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers	ISC 无锡固电	ISC
2SD601A	NPN Plastic-Encapsulate Transistor FEATURES Power dissipation PCM: 0.2 W (TAMB=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ,TSTG: -55℃to +150℃	SECOS 喜可士	SECOS
2SD601A	SOT-23 Plastic-Encapsulate Transistors FEATURE High hFE Low VCE(sat) For general amplification Complementary to 2SB709A	DGNJDZ 南晶电子	DGNJDZ
2SD601AQ	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601AR	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601AS	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601AX2	Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Base-coupled transistors) • Reduction of the mounting area and assembly cost by one half	PANASONIC 松下	PANASONIC
2SD601AYQ	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601AYR	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601AYS	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601AZQ	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601AZR	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601AZS	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601Q	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601R	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601S	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601YQ	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601YR	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601YS	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601ZQ	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601ZR	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD601ZS	Si NPN DIFFUSED JUNCTION MESA 2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)	PANASONIC 松下	PANASONIC
2SD602	Si NPN Triple Diffused Junction Mesa	PANASONIC 松下	PANASONIC
2SD602	Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Features 1. Low collector to emitter saturation voltage VCE(sat). 2. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.	PANASONIC 松下	PANASONIC
2SD602	NPN Plastic-Encapsulate Transistor FEATURE • Low collector to emitter saturation voltage VCE(sat)	SECOS 喜可士	SECOS
2SD602	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low Collector to Emitter Saturation Voltage ● Mini Type Package	JIANGSU 长电科技	JIANGSU
2SD602	Silicon NPN Epitaxial Planar Type Features ● Low collector to emitter saturation voltage VCE(sat). ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.	KEXIN 科信电子	KEXIN
2SD602	TRANSISTOR (NPN) FEATURES ● Low Collector to Emitter Saturation Voltage ● Mini Type Package	HTSEMI 金誉半导体	HTSEMI
2SD602	SOT-23 Plastic-Encapsulate Transistors FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package	DGNJDZ 南晶电子	DGNJDZ
2SD602	Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Complementary pair with 2SB710(A)。 Applications General power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SD602A	Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Complementary pair with 2SB710(A)。 Applications General power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SD602A	SOT-23 Plastic-Encapsulate Transistors FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package	DGNJDZ 南晶电子	DGNJDZ
2SD602A	丝印代码：X*；Silicon Epitaxial Planar Transistor FEATURES ● Complementary to 2SB710A PNP Transistor ● Low collector to emitter saturation voltage VCE(sat) APPLICATIONS ● General purpose amplifier applications	BILIN 银河微电	BILIN
2SD602A	TRANSISTOR (NPN) FEATURES ● Low Collector to Emitter Saturation Voltage ● Mini Type Package	HTSEMI 金誉半导体	HTSEMI
2SD602A	Silicon NPN Epitaxial Planar Type Features ● Low collector to emitter saturation voltage VCE(sat). ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.	KEXIN 科信电子	KEXIN
2SD602A	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low Collector to Emitter Saturation Voltage ● Mini Type Package	JIANGSU 长电科技	JIANGSU
2SD602A	NPN Plastic-Encapsulate Transistor FEATURE • Low collector to emitter saturation voltage VCE(sat)	SECOS 喜可士	SECOS
2SD602A	Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Features 1. Low collector to emitter saturation voltage VCE(sat). 2. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.	PANASONIC 松下	PANASONIC
2SD602A	Si NPN Triple Diffused Junction Mesa	PANASONIC 松下	PANASONIC
2SD608	isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) • Complement to Type 2SB628 APPLICATIONS • Designed for audio frequency power amplifier and low speed switching applications.	ISC 无锡固电	ISC
2SD600	100V/120V, 1A Low-Frequency Power Amplifier Applications 文件：126.37 Kbytes Page：4 Pages	SANYO 三洋	SANYO
2SD600K	100V/120V, 1A Low-Frequency Power Amplifier Applications 文件：126.37 Kbytes Page：4 Pages	SANYO 三洋	SANYO
2SD600K	NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications	ONSEMI 安森美半导体	ONSEMI
2SD600K	Silicon NPN transistor in a TO-126F Plastic Package. 文件：437.8 Kbytes Page：6 Pages	FOSHAN 蓝箭电子	FOSHAN
2SD601	Si NPN DIFFUSED JUNCTION MESA	PANASONIC 松下	PANASONIC
2SD601A	晶体管	JSCJ 长晶科技	JSCJ

2SD60产品属性

类型
描述
PCM(W)：
0.2
IC(A)：
0.1
VCBO(V)：
60
VCEO(V)：
50
VEBO(V)：
7
hFEMin：
160
hFEMax：
460
hFE@VCE(V)：
10
hFE@IC(A)：
0.002
VCE(sat)(V)：
0.3
VCE(sat)\u001E@IC(A)：
0.1
VCE(sat)\u001E@IB(A)：
0.01
Package：
SOT-23

2SD60供应商更多...

更新时间：2026-5-14 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2SD600KE	onsemi(安森美)	25+	-	20948	样件支持,可原厂排单订货!	询价
深圳市得捷芯城科技有限公司	2SD600KE	onsemi(安森美)	25+	-	21000	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
上海意淼电子科技有限公司	2SD600KF	SANYO	23+	NA	20000	全新原装假一赔十	询价
深圳市科芯源微电子有限公司	2SD600K-Y	KEC	2026+	TO126	54648	百分百原装现货实单必成欢迎询价	询价
中天科工半导体（深圳）有限公司	2SD600K	ISC	20+	TO-126	15800	原装优势主营型号-可开原型号增税票	询价
深圳市一线半导体有限公司	2SD600KE	SANYO	24+	TO-126	3600		询价
深圳市创新迹电子有限公司	2SD600K	SANYO/国产	22+	TO126	20000	公司只有原装品质保证	询价
深圳市恒创达实业有限公司	2SD600KE	SANYO	17+	TO-126	6200		询价
洪芯国际半导体（深圳）有限公司	2SD600K-Y	KEC	26+	TO-126	86720	全新原装正品价格最实惠假一赔百	询价
深圳市能创芯电子科技有限公司	2SD600K-Y	KEC	23+	TO-126	3000	原装正品假一罚百!可开增票!	询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

2SD60晶体管资料

2SD60产品属性

2SD60供应商更多...

2SD60芯片相关品牌

2SD60规格书下载地址

2SD60参数引脚图相关

2SD60数据表相关新闻

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DdatasheetPDF页码索引