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2SD601A晶体管资料

  • 2SD601A别名:2SD601A三极管、2SD601A晶体管、2SD601A晶体三极管

  • 2SD601A生产厂家:日本松下公司

  • 2SD601A制作材料:Si-NPN

  • 2SD601A性质:表面帖装型 (SMD)_通用型 (Uni)

  • 2SD601A封装形式:贴片封装

  • 2SD601A极限工作电压:60V

  • 2SD601A最大电流允许值:0.1A

  • 2SD601A最大工作频率:100MHZ

  • 2SD601A引脚数:3

  • 2SD601A最大耗散功率:0.25W

  • 2SD601A放大倍数

  • 2SD601A图片代号:H-15

  • 2SD601Avtest:60

  • 2SD601Ahtest:100000000

  • 2SD601Aatest:0.1

  • 2SD601Awtest:0.25

  • 2SD601A代换 2SD601A用什么型号代替:BC846,BCV71,BCV72,2SC3323,2SC3324,

型号 功能描述 生产厂家 企业 LOGO 操作
2SD601A

Silicon NPN epitaxial planer type

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through

PANASONIC

松下

2SD601A

Silicon PNP epitaxial planer type

For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

PANASONIC

松下

2SD601A

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

2SD601A

NPN Plastic-Encapsulate Transistor

FEATURES Power dissipation PCM: 0.2 W (TAMB=25℃) Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ,TSTG: -55℃to +150℃

SECOS

喜可士

2SD601A

SOT-23 Plastic-Encapsulate Transistors

FEATURE High hFE Low VCE(sat) For general amplification Complementary to 2SB709A

DGNJDZ

南晶电子

2SD601A

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.3V(Max) @IC=0.1A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

ISC

无锡固电

2SD601A

Silicon Epitaxial Planar Transistor

FEATURES z Mini type package. z Complementary to 2SB709A PNP Transistor. z Low collector to emitter saturation voltage VCE(sat). z High forward current transfer ratio hFE. APPLICATIONS z General purpose amplifier applications.

BILIN

银河微电

2SD601A

晶体管

JSCJ

长晶科技

2SD601A

Silicon NPN transistor in a SOT-23 Plastic Package

文件:803.33 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

2SD601A

Silicon NPN Epitaxial Planer Type

文件:38.05 Kbytes Page:1 Pages

KEXIN

科信电子

2SD601A

NPN Plastic-Encapsulate Transistor

文件:58.7 Kbytes Page:1 Pages

SECOS

喜可士

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Base-coupled transistors) • Reduction of the mounting area and assembly cost by one half

PANASONIC

松下

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

NPN Plastic-Encapsulate Transistor

文件:58.7 Kbytes Page:1 Pages

SECOS

喜可士

NPN Plastic-Encapsulate Transistor

文件:58.7 Kbytes Page:1 Pages

SECOS

喜可士

NPN Transistors

文件:386.87 Kbytes Page:1 Pages

KEXIN

科信电子

Transistor

Semitehelec

NPN Transistors

文件:396.44 Kbytes Page:1 Pages

KEXIN

科信电子

NPN Transistors

文件:396.44 Kbytes Page:1 Pages

KEXIN

科信电子

NPN Transistors

文件:396.44 Kbytes Page:1 Pages

KEXIN

科信电子

NPN Transistors

文件:396.44 Kbytes Page:1 Pages

KEXIN

科信电子

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

Si NPN DIFFUSED JUNCTION MESA

2SD389, 2SD389A Si NPN Diffused Juction Mesa Medium Power Amplifier. Features ● Large Pc ● Wide area of safe operation (ASO) 2SD601, 2SD601A Si NPN Epitaxial Planar General Amplifier Complementary Pair with 2SB709, 2SB709A Features ● High hFE ● Low VCE(sat)

PANASONIC

松下

2SD601A产品属性

  • 类型

    描述

  • PCM(W):

    0.2

  • IC(A):

    0.1

  • VCBO(V):

    60

  • VCEO(V):

    50

  • VEBO(V):

    7

  • hFEMin:

    160

  • hFEMax:

    460

  • hFE@VCE(V):

    10

  • hFE@IC(A):

    0.002

  • VCE(sat)(V):

    0.3

  • VCE(sat)\u001E@IC(A):

    0.1

  • VCE(sat)\u001E@IB(A):

    0.01

  • Package:

    SOT-23

更新时间:2026-5-15 16:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANASONIC/松下
2025+
SOT23
5000
原装进口价格优 请找坤融电子!
PANASON
18+
SOT23-3
85600
保证进口原装可开17%增值税发票
PANASONIC/松下
25+
SOT23
9800
全新原装现货,假一赔十
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
Panasonic/松下
24+
SOT-23
215100
新进库存/原装
PANASONIC
23+
SOT-23
3000
正规渠道,只有原装!
Panasonic
23+
SOT23
7850
只做原装正品假一赔十为客户做到零风险!!
PANASONIC
24+
SOT-23
56000
一级代理/全新原装现货/长期供应!!!
PANASONIC
00+
SOT-23
10512
全新 发货1-2天
Panasonic
25+
SOT-23
2987
只售原装自家现货!诚信经营!欢迎来电

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