位置:首页 > IC中文资料第5802页 > 2SD600

2SD600晶体管资料

  • 2SD600别名:2SD600三极管、2SD600晶体管、2SD600晶体三极管

  • 2SD600生产厂家:日本松下公司

  • 2SD600制作材料:Si-NPN

  • 2SD600性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD600封装形式:直插封装

  • 2SD600极限工作电压:100V

  • 2SD600最大电流允许值:1A

  • 2SD600最大工作频率:130MHZ

  • 2SD600引脚数:3

  • 2SD600最大耗散功率:8W

  • 2SD600放大倍数

  • 2SD600图片代号:A-21

  • 2SD600vtest:100

  • 2SD600htest:130000000

  • 2SD600atest:1

  • 2SD600wtest:8

  • 2SD600代换 2SD600用什么型号代替:BD139,BD230,BD379,2SD1684,3DD153B,

型号 功能描述 生产厂家 企业 LOGO 操作
2SD600

100V/120V, 1A Low-Frequency Power Amp Applications

1. High breakdown voltage V CEO 100/120V, High current 1A. 2. Low saturation voltage, excellent hFElinearity.

SANYO

三洋

2SD600

isc Silicon NPN Power Transistor

DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications

ISC

无锡固电

2SD600

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications

SAVANTIC

2SD600

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications

ISC

无锡固电

2SD600

Power Amplifier Applications

100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.

ONSEMI

安森美半导体

2SD600

100V/120V, 1A Low-Frequency Power Amplifier Applications

文件:126.37 Kbytes Page:4 Pages

SANYO

三洋

2SD600

NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications

ONSEMI

安森美半导体

Power Amplifier Applications

100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.

ONSEMI

安森美半导体

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications

ISC

无锡固电

100V/120V, 1A Low-Frequency Power Amp Applications

1. High breakdown voltage V CEO 100/120V, High current 1A. 2. Low saturation voltage, excellent hFElinearity.

SANYO

三洋

100V/120V, 1A Low-Frequency Power Amplifier Applications

文件:126.37 Kbytes Page:4 Pages

SANYO

三洋

Silicon NPN transistor in a TO-126F Plastic Package.

文件:437.8 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications

ONSEMI

安森美半导体

2SD600产品属性

  • 类型

    描述

  • 型号

    2SD600

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    100V/120V, 1A Low-Frequency Power Amp Applications

更新时间:2026-5-17 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
-
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
KEC
2026+
TO126
54648
百分百原装现货 实单必成 欢迎询价
SANYO/三洋
25+
NA
880000
明嘉莱只做原装正品现货
SANYO
24+
TO-126
3600
SANYO
17+
TO-126
6200
KEC
26+
TO-126
86720
全新原装正品价格最实惠 假一赔百
三年内
1983
只做原装正品
SANYO/国产
22+
TO126
20000
公司只有原装 品质保证
ISC
20+
TO-126
15800
原装优势主营型号-可开原型号增税票
SANYO/国产
07+
TO126
3091
一级代理,专注军工、汽车、医疗、工业、新能源、电力

2SD600数据表相关新闻