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2SD600K晶体管资料
2SD600K别名：2SD600K三极管、2SD600K晶体管、2SD600K晶体三极管
2SD600K生产厂家：日本松下公司
2SD600K制作材料：Si-NPN
2SD600K性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SD600K封装形式：直插封装
2SD600K极限工作电压：120V
2SD600K最大电流允许值：1A
2SD600K最大工作频率：130MHZ
2SD600K引脚数：3
2SD600K最大耗散功率：8W
2SD600K放大倍数：
2SD600K图片代号：A-21
2SD600Kvtest：120
2SD600Khtest：130000000
- 2SD600Katest：1
2SD600Kwtest：8
2SD600K代换 2SD600K用什么型号代替：2SC2690,2SC2690A,2SD1382,2SD1563,2SD1684,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SD600K | Power Amplifier Applications 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. | ONSEMI 安森美半导体 |   | |
2SD600K | 100V/120V, 1A Low-Frequency Power Amp Applications 1. High breakdown voltage V CEO 100/120V, High current 1A. 2. Low saturation voltage, excellent hFElinearity. | SANYO 三洋 | | |
2SD600K | Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications | ISC 无锡固电 | | |
2SD600K | Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications | SAVANTIC | | |
2SD600K | Silicon NPN transistor in a TO-126F Plastic Package. 文件：437.8 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | |
2SD600K | NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications | ONSEMI 安森美半导体 | | |
2SD600K | 100V/120V, 1A Low-Frequency Power Amplifier Applications 文件：126.37 Kbytes Page：4 Pages | SANYO 三洋 | | |
100V/120V, 1A Low-Frequency Power Amp Applications 1. High breakdown voltage V CEO 100/120V, High current 1A. 2. Low saturation voltage, excellent hFElinearity. | SANYO 三洋 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications | SAVANTIC | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications | ISC 无锡固电 | | ||
100V/120V, 1A Low-Frequency Power Amplifier Applications 文件：126.37 Kbytes Page：4 Pages | SANYO 三洋 | |
2SD600K产品属性
- 类型
描述
- 型号
2SD600K
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
100V/120V, 1A Low-Frequency Power Amp Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
KEC |
25+ |
TO126 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
KEC |
24+ |
TO126 |
990000 |
明嘉莱只做原装正品现货 |
|||
SANYO/国产 |
22+ |
TO126 |
20000 |
公司只有原装 品质保证 |
|||
ISC |
20+ |
TO-126 |
15800 |
原装优势主营型号-可开原型号增税票 |
|||
KEC |
23+ |
TO126 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
SANYO |
24+ |
TO-126 |
3600 |
||||
SANYO |
17+ |
TO-126 |
6200 |
||||
三年内 |
1983 |
只做原装正品 |
|||||
SANYO |
23+ |
TO-126F |
8650 |
受权代理!全新原装现货特价热卖! |
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2SD600K规格书下载地址
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2019-2-15
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