NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications

NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications Features •High DC current gain. •Large current capacity and wide ASO. Applications •Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE PULSE MOTOR DRIVE APPLICATIONS

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max)

For Power amplification (100V, 8A)

Power Transistor (100V, 8A) Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1668.

LOW FREQUENCY POWER AMPLIFIER

[USHA] LOW FREQUENCY POWER AMPLIFIER • Complement to KSA643 • Collector Dissipatin Pc = 500mW

Power Transistor

Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC/IB=4/0.4A. 2) Excellent DC current gain characteristics. 3) PC = 300W (TC=25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.

For Motor / Relay drive (120V, 6A)

For Motor / Relay drive (120V, 6A) Structure NPN Silicon Epitaxial Planar Transistor (Darlington connection) Features 1) Darlington connection , high hFE. 2) Resistor inbetween base-emitter. 3) Built-in damper diode. Applications Relaydrive Motor drive

Silicon NPN epitaxial planer type(For low-frequency amplification)

Silicon NPN epitaxial planar type For low-frequency driver amplification ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO

Silicon NPN epitaxial planer type(For low-frequency amplification)

Silicon NPN epitaxial planar type For low-frequency driver amplification ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO

Silicon NPN epitaxial planar type For low-frequency driver amplification

Silicon NPN epitaxial planar type For low-frequency driver amplification ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO

For low-frequency amplification

Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

Silicon NPN epitaxial planar type For low-frequency amplification

Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half

Color TV Horizontal Deflection Output Applications

• High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

Color TV Horizontal Deflection Output Applications

Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output

120V / 2A Driver Applications

120V / 2A Driver Applications Features · Darlington connection · High DC current gain. · DC current gain is less affected by temperature. Applications · Motor drivers, hammer drivers, and relay drivers.

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

Horizontal Deflection Output for Color TV, Digital TV. High Speed Switching Applications. ● High voltage: VCBO = 1700 V ● Low saturation voltage: VCE (sat) = 5 V (max) ● High speed: tf = 0.8 µs (max)

140V / 12A, AF 60W Output Applications

Features • Wide ASO because of on-chip ballast resistance. • Good dependence of fT on current and good HF characteristic.

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) • High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) • Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA) B • Complement to Type 2SB1687 APPLICATIONS • Designed for a

SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Silicon PNP Triple Diffused Planar Transistor (Complement to type 2SD2642) Application : Audio, Series Regulator and General Purpose

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose

Color TV Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Color TV horizontal deflection output applications.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 700V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)=3.0V(Max) @IC= 7.2A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

Color TV Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor. Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 700V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):3.0V(Max) @IC= 10.8A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

Color TV Horizontal Deflection Output Applications

Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

Color TV Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

丝印代码：EW；General purpose amplification (12V, 1.5A)

Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ 200mV At IC = 500mA / IB = 25mA Application Low frequency amplifier

Low frequency amplifier

Features 1) Collector current is large. 2) VCE(sat)≦ 180mV at IC= 1A / IB= 50mA 3) Complementary PNP Types : 2SB1690 Application LOW FREQUENCY AMPLIFIER

丝印代码：FW；Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤ 180mV At IC = 1A / IB = 50mA Application Low frequency amplifier Driver

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

General Purpose Transistor (50V, 0.15A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

丝印代码：BJ；General purpose Transistor (50V, 150mA)

Features 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. 　 (Max.VCE(sat)=300mV at IC/IB=50/5mA) Application LOW FREQUENCY AMPLIFIER, DRIVER

General purpose Transistor (50V, 150mA)

Features 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. 　 (Max.VCE(sat)=300mV at IC/IB=50/5mA) Application LOW FREQUENCY AMPLIFIER, DRIVER

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair with 2S

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair with 2S

丝印代码：EU；General purpose amplification (30V, 1A)

Features 1) A collector current is large 2) Collector-Emitter saturation voltage is low. VCE(sat)≦350mV at IC=500mA /IB=25mA Application LOW FREQUENCY AMPLIFIER, DRIVER

NPN 1A 30V Low Frequency Amplifier Transistors

Features 1) A collector current is large 2) Collector-Emitter saturation voltage is low. VCE(sat)≦350mV at IC=500mA /IB=25mA Application LOW FREQUENCY AMPLIFIER, DRIVER

Low frequency amplifier

Features 1) Collector current is large. 2) VCE(sat)≦ 350mV at IC= 1A / IB= 50mA 3) Complementary PNP Types : 2SB1695 Application LOW FREQUENCY AMPLIFIER

丝印代码：FZ；Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤ 350mV At IC = 1A / IB = 50mA Application Low frequency amplifier Driver

Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤ 350mV At IC = 1A / IB = 50mA Application Low frequency amplifier Driver

丝印代码：FW；Low frequency amplifier transistor(12V,2A)

Features Low VCE(sat)≦180mV (IC/IB=1A/50mA) Application LOW FREQUENCY AMPLIFIER

丝印代码：FZ；Low frequency amplifier

Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1698 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=1A/50mA) 4) Lead Free/RoHS Compliant. Applications Motor driver , LED driver Power supply

Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) : max.250mV At lc=1.5A / lB=30mA Application Low frequency amplifier Driver

Low frequency amplifier

Features 1) Collector current is large.(2A) 2) VCE(sat)≦ 370mV at IC= 1.5A / IB= 75mA 3) Complementary PNP Types : 2SB1706 lApplication LOW FREQUENCY AMPLIFIER

丝印代码：T146；Low frequency amplifier

Features 1) Collector current is large. (4A) 2) VCE(sat)≦ 250mV at IC= 2A / IB= 40mA 3) Complementary PNP Types : 2SB1707 Application LOW FREQUENCY AMPLIFIER

Low frequency amplifier

Features 1) A collector current is large. (3A) 2) VCE(sat) : max. 250mV At IC = 1.5A / IB = 30mA Application Low frequency amplifier Driver

丝印代码：TL；General purpose amplification (12V, 1.5A)

Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat)≦200mV at IC=500mA/IB=25mA Application LOW FREQUENCY AMPLIFIER

General purpose amplification (30V, 1A)

Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat):max.350mV at IC=500mA/IB=25mA Application LOW FREQUENCY AMPLIFIER

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc Silicon NPN Power Transistor

DESCRIPTION • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). APPLICATIONS • Designed for Color TV Horizontal Deflection Output Applications.

Color TV Horizontal Deflection Output Applications

Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

Silicon NPN Epitaxial Type (Darlington Power Transistor)

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) • Zener diode included between collector and base

Silicon NPN transistor in a TO-220F Plastic Package.

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