SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Silicon PNP Triple Diffused Planar Transistor (Complement to type 2SD2642) Application : Audio, Series Regulator and General Purpose

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) • High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) • Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA) B • Complement to Type 2SB1687 APPLICATIONS • Designed for a

双极型晶体管

硅 NPN 三重扩散型晶体管（连接达林顿管） ・直流电流放大倍数高（连接达林顿）\n・适用于功放输出段。\n・有配对品。\n・ASO 较广。;

Silicon NPN Triple Diffused Planar Transistor

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封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 110V 6A TO220F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个