2SD258晶体管资料

  • 2SD258别名:2SD258三极管、2SD258晶体管、2SD258晶体三极管

  • 2SD258生产厂家:日本三肯公司

  • 2SD258制作材料:Si-NPN

  • 2SD258性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD258封装形式:直插封装

  • 2SD258极限工作电压:110V

  • 2SD258最大电流允许值:4A

  • 2SD258最大工作频率:<1MHZ或未知

  • 2SD258引脚数:2

  • 2SD258最大耗散功率:25W

  • 2SD258放大倍数

  • 2SD258图片代号:E-8

  • 2SD258vtest:110

  • 2SD258htest:999900

  • 2SD258atest:4

  • 2SD258wtest:25

  • 2SD258代换 2SD258用什么型号代替:BD241C,BD243C,BD539D,BD581,BD591,BD955,BDY79,3DK205C,

型号 功能描述 生产厂家 企业 LOGO 操作
2SD258

NPN Transistor

文件:43.46 Kbytes Page:1 Pages

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Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode.

SANYO

三洋

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output

ISC

无锡固电

Color TV Horizontal Deflection Output Applications

Features · High speed. · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Color TV horizontal deflection output applications

ISC

无锡固电

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES · Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) · High DC Current Gain hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A)

RENESAS

瑞萨

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS

FEATURES • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) • High DC Current Gain hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A)

NEC

瑞萨

AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS

FEATURES • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

NEC

瑞萨

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 5 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector Current-IC= 5A • Low Saturation Voltage - : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA • High DC Current Gain- : hFE= 150~600@ IC= 1A APPLICATIONS • Designed for audio frequency amplifier and switching applications.

ISC

无锡固电

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low saturation voltage, high DC current gain. Applications Audio frequency amplifier and switching applications.

FOSHAN

蓝箭电子

NPN Silicon Epitaxial Power Transistor

FEATURES • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

THINKISEMI

思祁半导体

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES · Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) · High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

RENESAS

瑞萨

TO-126 Plastic-Encapsulate Transistors

Features Low Vce High DC Current Gain

DGNJDZ

南晶电子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 5 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High DC Current Gain

JIANGSU

长电科技

TO-126 Plastic-Encapsulate Transistors

Features Low Vce High DC Current Gain

DGNJDZ

南晶电子

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • High DC Current Gain : hFE = 2000 (Min.)(VCE = 3 V, IC = 3 A) • Low Saturation Voltage : VCE(sat) = 1.5 V (Max.)(IC = 3 A)

TOSHIBA

东芝

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV)

2SD2586, D2586 Horizontal Deflection Output For Color TV. 1. High Voltage : V cbo = 1500V 2. Low Saturation Voltage = Vce(sat) =5V (Max.)

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High voltage, high speed ·Low saturation voltage ·Bult-in damper type APPLICATIONS ·Horizontal deflection output for color TV

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High voltage, high speed ·Low saturation voltage ·Bult-in damper type APPLICATIONS ·Horizontal deflection output for color TV

ISC

无锡固电

Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659) Application : Audio, Series Regulator and General Purpose

Sanken

三垦

Silicon NPN Power Transistors

文件:171.75 Kbytes Page:4 Pages

SAVANTIC

NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications

ONSEMI

安森美半导体

Transistor-Bipolar Small Signal Transistors

RENESAS

瑞萨

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Silicon NPN Power Transistors

文件:292.93 Kbytes Page:4 Pages

SAVANTIC

isc Silicon NPN Darlington Power Transistor

文件:265.63 Kbytes Page:2 Pages

ISC

无锡固电

2SD258产品属性

  • 类型

    描述

  • 型号

    2SD258

  • 制造商

    ON Semiconductor

更新时间:2025-10-29 23:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
2023+
TO-252
50000
原装现货
SANKEN
24+
NA/
13250
原装现货,当天可交货,原型号开票
TOSHIBA
11+
TO-251
2400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SANKEN/三垦
25+
TO-220
45000
SANKEN/三垦全新现货2SD2589即刻询购立享优惠#长期有排单订
NEC
22+
TO-126
100000
代理渠道/只做原装/可含税
CJ/长晶
25+
TO126
54648
百分百原装现货 实单必成 欢迎询价
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
TOSHIBA
24+/25+
400
原装正品现货库存价优
NEC
22+
TO-126
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
TOSHIBA
24+
TO-252
3200
只做原装正品现货 欢迎来电查询15919825718

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