AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS

FEATURES • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES · Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) · High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector Current-IC= 5A • Low Saturation Voltage - : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA • High DC Current Gain- : hFE= 150~600@ IC= 1A APPLICATIONS • Designed for audio frequency amplifier and switching applications.

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High DC Current Gain

TO-126 Plastic-Encapsulate Transistors

Features Low Vce High DC Current Gain

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 5 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon Epitaxial Power Transistor

FEATURES • Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) • High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low saturation voltage, high DC current gain. Applications Audio frequency amplifier and switching applications.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 5 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Medium Power Transistor

普通三极管

晶体管

TO-126 Plastic-Encapsulate Transistors

Features Low Vce High DC Current Gain