Silicon NPN Triple Diffused

Features • High breakdown voltage VCBO = 1500 V • Built-in damper diode type Application CTV horizontal deflection output

Power Bipolar Transistors

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High breakdown voltage • Built-in damper diode APPLICATIONS • For color TV horizontal output deflection applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • High breakdown voltage • Built-in damper diode APPLICATIONS • For color TV horizontal output deflection applications

Power Bipolar Transistors

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

丝印代码：T114；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

丝印代码：T114；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Power Bipolar Transistors

High-current gain Power Transistor

Features ● High DC current gain. ● Low saturation voltage.

丝印代码：TL；High-current gain Power Transistor (-60V, -3A)

2SB1639 ( -60V, -3A) 2SD2318, 2SD1944 (60V, 3A) High DC current gain.

丝印代码：TL；High-current gain Power Transistor(60V, 3A)

Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639.

丝印代码：TL；High-current gain Power Transistor (60V, 3A)

Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A)

High-current gain Power Transistor (60V, 3A)

Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A)

High-current gain Power Transistor (60V, 3A)

1) High DC current gain.\n2) Low saturation voltage.\n   (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A)\n3) Complements the 2SB1639.;

Silicon NPN epitaxial planer type(For low-frequency power amplification)

For low-frequency power amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the low-voltage power supply.

Compact Motor Driver Applications??????????

Features • Low saturation voltage. • Contains a diode between colletor and emitter. • Contains a bias resistor between base and emitter. • Large current capacity. • Small-sized package facilitating the realization of high-density, small-sized hybrid ICs.

NPN Epitaxial Planar Silicon Transistor

Features ● Low saturation voltage. ● Contains a diode between colletor and emitter. ● Contains a bias resistor between base and emitter. ● Large current capacity. ● Small-sized package facilitating the realization of high-density, small-sized hybrid ICs.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A • High Power Dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power ampli

TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS)

TRANSISTORS (SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS) Silicon Large Power Transistors Silicon Power Transistors for Audio

TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS)

Silicon Power Transistors for TV and Monitor Display

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For color TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For color TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output applications

TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS)

Silicon Power Transistors for TV and Monitor Display

TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS)

Silicon Power Transistors for TV and Monitor Display

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For color TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For color TV horizontal output applications

Silicon NPN Triple Diffused

Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530

Silicon NPN Triple Diffused

Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530

Silicon NPN Power Transistors

DESCRIPTION 1. With TO-220 package 2. Complement to type 2SB434 APPLICATIONS 1. For low frequency power amplifier and switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SB434 APPLICATIONS ·For low frequency power amplifier and switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • DARLINGTON • High DC current gain APPLICATIONS • Audio ,regulator and general purpose

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • DARLINGTON • High DC current gain APPLICATIONS • Audio ,regulator and general purpose

丝印代码：PQ；Power Transistor

Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763

Silicon NPN epitaxial planer type(For low-frequency amplification)

Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • High emitter-base voltage (Collector open) VEBO • Low noise voltage NV

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • Built-in damper diode • High voltage ,high speed • Low saturation voltage APPLICATIONS • Horizontal deflection output for color TV

2SD2348

2SD2348 Transostor

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • Built-in damper diode • High voltage ,high speed • Low saturation voltage APPLICATIONS • Horizontal deflection output for color TV

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for color TV

2SD2349

Silicon NPN Power Transistors

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for color TV

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

General Purpose Transistor

Features ● High DC current gain. ● High emitter-base voltage. (VCBO=12V) ● Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

General Purpose Transistor (50V, 0.15A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

MEDIUM POWER TRANSISTOR(25V, 1.2V) GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

丝印代码：BJ；General Purpose Transistor (50V, 150mA)

Features 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA) Application LOW FREQUENCY AMPLIFIER

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications • High DC current gain: hFE= 800 to 3200 • Low collector saturation voltage: VCE (sat)= 0.3 V (typ.)

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

1. High DC Current Gain : hFE = 800 ~ 3200 2. Low Collector Saturation Voltage : Vce(sat) = 0.4V (Typ.)

TRANSISTORS(SELECTION GUIDE BY APPLICATIONS AND FUNCTIONS)

Silicon Power Transistors for TV and Monitor Display

Silicon NPN epitaxial planer type(For low-frequency amplification)

Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion th

Silicon PNP epitaxial planer typeFor low-frequency amplification)

Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion throug

Silicon NPN Epitaxial Planar Type

Features ● Low collector-emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN epitaxial planer type(For low-frequency output amplification)

For low-frequency output amplification Complementary to 2SB1538 ■ Features • Low collector to emitter saturation voltage VCE(sat): 0.15 V • Allowing supply with the radial taping

Silicon PNP epitaxial planer type(For low-frequency amplification)

Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion throug

Silicon NPN epitaxial planer type(For low-frequency amplification)

Silicon NPN epitaxial planer type For low-frequency amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN Epitaxial Planar Type

Features ● Low collector-emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.