NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Dar

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A) • Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use low frequ

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING