NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

The 2SD2165 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor.

In addition, this transistor features a small resin-molded insulation package, thus contributing to high-density mounting and mounting cost reduction.

FEATURES

• High hFE and low VCE(sat):

hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)

VCE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)

• Mold package that does not require an insulating board or

insulation bushing