isc Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) • Wide Area of Safe Operation • Complement to Type 2SB1421 APPLICATIONS • Designed for high power amplifications. • Optimum for the output stage of a HiFi audio amplifier

Silicon NPN Triple Diffused Planar Transistor(Ignitor, Driver for Solenoid and Motor, and General Purpose)

Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor Application : Ignitor, Driver for Solenoid and Motor, and General Purpose

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1500(Min)@ IC= 3A • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 4A • Incorporating a built-in zener diode • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for us

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Darlington Connection for a High hFE ● High Input Impedance

Silicon Epitaxial Planar Transistor

FEATURES ● Darlington connection for a high Hfe ● High input impedance APPLICATIONS ● General purpose amplifiers.

TRANSISOR (NPN)

FEATURES ● Darlington Connection for a High hFE ● High Input Impedance

SOT-23 Plastic-Encapsulate Transistors

FEATURES Darlington Connection for a High hFE High Input Impedance

NPN Plastic Plastic-Encapsulate Transistor

FEATURE • Darlington connection for a high hFE. • High input impedance.

High-gain Amplifier Transistor (30V, 0.3A)

Features 1) Darlington connection for a high hFE. (DC current gain=5000(Min.)at VCE=3V, IC=10mA) 2) High input impedance. Application High gain amplifier

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Darlington connection for a high hFE, high input impedance. Applications High-gain amplifier transistor.

High-gain Amplifier Transistor (30V, 0.3A)

Features 1) Darlington connection for a high hFE. (DC current gain=5000(Min.)at VCE=3V, IC=10mA) 2) High input impedance. Application High gain amplifier

High-gain Amplifier Transistor (30V, 0.3A)

Features 1) Darlington connection for a high hFE. (DC current gain=5000(Min.)at VCE=3V, IC=10mA) 2) High input impedance. Application High gain amplifier

Medium Power Transistor(Motor, Relay drive) (60짹10V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

2SD2145

[ROHM] FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage ,high speed • Low collector saturation voltage APPLICATIONS • High speed switching power supply output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • High voltage ,high speed • Low collector saturation voltage APPLICATIONS • High speed switching power supply output applications

Silicon NPN Triple Diffused Planar Transistor

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Silicon NPN Triple Diffused Planar Transistor

文件：32.64 Kbytes Page：1 Pages

NPN Plastic-Encapsulate Transistor

文件：335.04 Kbytes Page：2 Pages

Silicon Epitaxial Planar Transistor

文件：1.07017 Mbytes Page：2 Pages

NPN-40V

双极型晶体管

达林顿管

NPN Plastic-Encapsulate Transistor

文件：335.04 Kbytes Page：2 Pages

NPN Plastic-Encapsulate Transistor

文件：335.04 Kbytes Page：2 Pages

High-gain Amplifier Transistor (30V, 0.3A)

文件：82.72 Kbytes Page：3 Pages

High-gain Amplifier Transistor (32V, 0.3A)

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High-gain Amplifier Transistor (30V, 0.3A)

文件：82.72 Kbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 30V 0.3A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Medium Power Transistor (Motor, Relay drive) (60짹10V, 2A)

文件：171.97 Kbytes Page：4 Pages

isc Silicon NPN Power Transistors

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Medium Power Transistor

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Medium Power Transistor (Motor, Relay drive) (60짹10V, 2A)

文件：171.97 Kbytes Page：4 Pages

Medium Power Transistor

文件：163.19 Kbytes Page：3 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 60V 2A CPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S

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High-current Gain Medium Power Transistor (20V, 0.5A)

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1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

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TRANSISTORS TO 92L TO-92LS MRT

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Silicon NPN Power Transistors

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