型号 功能描述 生产厂家 企业 LOGO 操作
2SD2144SV

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

ROHM

罗姆

High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S

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High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor

ROHM

罗姆

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

ROHM

罗姆

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

ROHM

罗姆

High-current Gain Medium Power Transistor (20V, 0.5A)

文件:99.44 Kbytes Page:5 Pages

ROHM

罗姆

2SD2144SV产品属性

  • 类型

    描述

  • 型号

    2SD2144SV

  • 制造商

    ROHM

  • 制造商全称

    Rohm

  • 功能描述

    High-current Gain MediumPower Transistor(20V, 0.5A)

更新时间:2026-3-2 17:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!
2SD2150
25+
1990
1990
ROHM
2016+
SOT89
6000
只做原装,假一罚十,公司可开17%增值税发票!
CJ/长电
21+
SOT-89
30000
百域芯优势 实单必成 可开13点增值税
CJ/长电
25+
SOT89
15000
全新原装现货,价格优势
蓝箭
25+
SOT-89
9300
百分百原装正品 真实公司现货库存 本公司只做原装 可
ROHM/罗姆
22+
SOT89
8000
原装正品支持实单
CJ/长电
22+
SOT-89
12245
现货,原厂原装假一罚十!
ROHM
24+
3100
ROHM
25+
SOT89
2987
只售原装自家现货!诚信经营!欢迎来电

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