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位置：首页 > IC中文资料第391页 > 2SD212

2SD212晶体管资料

  • 2SD212别名：2SD212三极管、2SD212晶体管、2SD212晶体三极管

  • 2SD212生产厂家：日本三肯公司

  • 2SD212制作材料：Si-NPN

  • 2SD212性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SD212封装形式：贴片封装

  • 2SD212极限工作电压：90V

  • 2SD212最大电流允许值：10A

  • 2SD212最大工作频率：<1MHZ或未知

  • 2SD212引脚数：2

  • 2SD212最大耗散功率：100W

  • 2SD212放大倍数：

  • 2SD212图片代号：E-44

  • 2SD212vtest：90

  • 2SD212htest：999900

  • 2SD212atest：10

  • 2SD212wtest：100

  • 2SD212代换 2SD212用什么型号代替：BD130,BD313,BDW21C,BDX10,BDY20,BDY39,2N3055,2N5632,2N5633,3DA74C,

型号 功能描述 生产厂家 企业 LOGO 操作
2SD2120

General Driver Applications?????????

General Driver Applications * Darlington connection ( Contains bias resistance, damper diode) * High DC current gain * Less dependence of DC current gain on temperature

SANYO

三洋

2SD2121

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

2SD2121

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

RENESAS

瑞萨

2SD2121

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2121

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2121-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2121-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2121L

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

RENESAS

瑞萨

2SD2121L

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

2SD2121S

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

2SD2121S

Silicon NPN Epitaxial

Features Low frequency power amplifier.

KEXIN

科信电子

2SD2121S

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S)

RENESAS

瑞萨

2SD2122

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

RENESAS

瑞萨

2SD2122

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

2SD2122

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2122

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2122-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2122-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2122L

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

2SD2122L

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

RENESAS

瑞萨

2SD2122S

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

RENESAS

瑞萨

2SD2122S

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

2SD2122S

Silicon NPN Epitaxial

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

KEXIN

科信电子

2SD2123

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

2SD2123

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

RENESAS

瑞萨

2SD2123

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2123

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2123-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2123-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2123L

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

2SD2123L

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

RENESAS

瑞萨

2SD2123S

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

2SD2123S

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

RENESAS

瑞萨

2SD2124

Silicon NPN Epitaxial

Application Low frequency power amplifier

RENESAS

瑞萨

2SD2124

Silicon NPN Epitaxial

Application Low frequency power amplifier

HitachiHitachi Semiconductor

日立日立公司

2SD2124

Silicon NPN Darlington Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2124

Silicon NPN Darlington Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2124-251

Silicon NPN Darlington Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2124-252

Silicon NPN Darlington Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2124L

Silicon NPN Epitaxial

Application Low frequency power amplifier

HitachiHitachi Semiconductor

日立日立公司

2SD2124L

Silicon NPN Epitaxial

Application Low frequency power amplifier

RENESAS

瑞萨

2SD2124S

Silicon NPN Epitaxial

Application Low frequency power amplifier

HitachiHitachi Semiconductor

日立日立公司

2SD2124S

Silicon NPN Epitaxial

Application Low frequency power amplifier

RENESAS

瑞萨

2SD2125

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal output applications for color TV ·Medium resolution display

ISC

无锡固电

2SD2125

Silicon NPN Power Transistors

DESCRIPTION ··With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal output applications for color TV ·Medium resolution display

SAVANTIC

2SD2125

NPN TRANSISTOR

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

ETCList of Unclassifed Manufacturers

未分类制造商

2SD2127

NPN EPITAXIAL TYPE (SWITCHIN, LAMP, SOLENOID DRIVE APPLICATIONS)

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

TOSHIBA

东芝

2SD2128

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.2V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications

ISC

无锡固电

2SD2129

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

ISC

无锡固电

2SD2129

NPN TRIPLE DIFFUSE TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVER APPLICATIONS)

TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS

TOSHIBA

东芝

2SD2129

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

SAVANTIC

2SD2121

Silicon NPN Triple Diffused

HitachiHitachi Semiconductor

日立日立公司

2SD2121(L)

Bipolar power general purpose transistor

HitachiHitachi Semiconductor

日立日立公司

2SD2121_15

NPN Transistors

文件：1.012 Mbytes Page：2 Pages

KEXIN

科信电子

2SD2121-B

NPN Transistors

文件：1.012 Mbytes Page：2 Pages

KEXIN

科信电子

2SD2121BL

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

2SD2121-C

NPN Transistors

文件：1.012 Mbytes Page：2 Pages

KEXIN

科信电子

2SD2121-D

NPN Transistors

文件：1.012 Mbytes Page：2 Pages

KEXIN

科信电子

2SD2125

Silicon NPN Power Transistors

文件：239.79 Kbytes Page：3 Pages

SAVANTIC

2SD2129

High-Power Switching Applications

文件：144.16 Kbytes Page：5 Pages

TOSHIBA

东芝

2SD212产品属性

  • 类型

    描述

  • 型号

    2SD212

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3 90V 1A 100W BEC

2SD212供应商更多...

更新时间：2025-10-4 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市明嘉莱科技有限公司
2SD2130
TOSHIBA/东芝
25+
NA
880000
明嘉莱只做原装正品现货
询价
深圳市一线半导体有限公司
2SD2129
24+
TO-220F
10000
全新
询价
深圳市诺美思科技有限公司
2SD2130
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市创盛芯科技有限公司
2SD2129
TOSHIBA/东芝
25+
TO-220F
656
全新原装正品支持含税
询价
深圳市安富世纪电子有限公司
2SD2129
TOSHIBA/东芝
23+
TO-220F
6000
专注配单,只做原装进口现货
询价
深圳市莱克讯科技有限公司
2SD2129
TOSHIBA/东芝
1922+
NA
9200
公司原装现货假一罚十特价欢迎来电咨询
询价
深圳市联世界科技有限公司
2SD2129
TOSHIBA
24+/25+
1210
原装正品现货库存价优
询价
深圳市威雅利发展有限公司
2SD2130
TOSHIBA
04+
TO-126
1790
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市河锋鑫科技有限公司
2SD2129
TOSHIBA/东芝
17+
TO-220F
31518
原装正品 可含税交易
询价
深圳市卓越微芯电子有限公司
2SD2130
TOSHIBA
25+
TO-126
1800
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价

2SD212芯片相关品牌

2SD212规格书下载地址

2SD212参数引脚图相关

2SD212数据表相关新闻

DdatasheetPDF页码索引

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