2SD212晶体管资料
2SD212别名：2SD212三极管、2SD212晶体管、2SD212晶体三极管
2SD212生产厂家：日本三肯公司
2SD212制作材料：Si-NPN
2SD212性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SD212封装形式：贴片封装
2SD212极限工作电压：90V
2SD212最大电流允许值：10A
2SD212最大工作频率：<1MHZ或未知
2SD212引脚数：2
2SD212最大耗散功率：100W
2SD212放大倍数：
2SD212图片代号：E-44
2SD212vtest：90
2SD212htest：999900
- 2SD212atest：10
2SD212wtest：100
2SD212代换 2SD212用什么型号代替：BD130,BD313,BDW21C,BDX10,BDY20,BDY39,2N3055,2N5632,2N5633,3DA74C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
General Driver Applications????????? General Driver Applications * Darlington connection ( Contains bias resistance, damper diode) * High DC current gain * Less dependence of DC current gain on temperature | SANYO 三洋 |   | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Triple Diffused Application\nLow frequency power amplifier complementary pair with 2SB1407(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Features Low frequency power amplifier. | KEXIN 科信电子 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Coming Soon. If you have some information on related parts, please share useful information by adding links below. | KEXIN 科信电子 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Darlington Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Darlington Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Darlington Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Darlington Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application Low frequency power amplifier | RENESAS 瑞萨 | | ||
NPN TRANSISTOR Coming Soon. If you have some information on related parts, please share useful information by adding links below. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal output applications for color TV ·Medium resolution display | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ··With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal output applications for color TV ·Medium resolution display | SAVANTIC | | ||
NPN EPITAXIAL TYPE (SWITCHIN, LAMP, SOLENOID DRIVE APPLICATIONS) Coming Soon. If you have some information on related parts, please share useful information by adding links below. | TOSHIBA 东芝 | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.2V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications | SAVANTIC | | ||
NPN TRIPLE DIFFUSE TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVER APPLICATIONS) TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS | TOSHIBA 东芝 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications | ISC 无锡固电 | | ||
Bipolar power general purpose transistor | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Transistor | HITACHIHitachi Semiconductor 日立日立公司 | | ||
NPN Transistors 文件：1.012 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.012 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.012 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.012 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
Silicon NPN Power Transistors 文件：239.79 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：214.19 Kbytes Page：3 Pages | SAVANTIC | |
2SD212产品属性
- 类型
描述
- NPN/PNP：
NPN
- VCEO (V)：
35
- hFE min.：
60
- hFE max.：
320
- Pc (W)：
18
- Production Status：
EOL
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC/松下 |
2026+ |
SOT-23 |
65428 |
百分百原装现货 实单必成 |
|||
PANASONIC/松下 |
23+ |
TO92 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
PANASONIC/松下 |
2450+ |
SOT-23 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
PANASONI |
23+ |
TO92 |
688 |
全新原装正品现货,支持订货 |
|||
PANASONIC |
25+ |
NA |
67078 |
专做原装正品,假一罚百! |
|||
PANASONIC |
2602+ |
TO.220-3 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
PANASONI |
22+ |
TO92 |
20000 |
公司只有原装 品质保证 |
|||
PANASONIC/松下 |
25+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
|||
TOS |
25+23+ |
TO-92L |
25348 |
绝对原装正品全新进口深圳现货 |
|||
Panasonic-SSG |
24+ |
TO-92 |
7500 |
2SD212规格书下载地址
2SD212参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
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- 4069
- 4066
- 3q1
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- 3579
- 35001
- 3477
- 31337
- 303c
- 2SD2140
- 2SD214
- 2SD2139
- 2SD2138
- 2SD2137A
- 2SD2137
- 2SD2136
- 2SD2135
- 2SD2134
- 2SD2133
- 2SD2132
- 2SD2131
- 2SD2130
- 2SD213
- 2SD2129
- 2SD2128
- 2SD2127
- 2SD2125
- 2SD2124L,S
- 2SD2124
- 2SD2123L,S
- 2SD2123
- 2SD2122L,S
- 2SD2122
- 2SD2121L,S
- 2SD2121
- 2SD2120
- 2SD2119
- 2SD2118(F5)
- 2SD2118
- 2SD2117
- 2SD2116
- 2SD2115L,S
- 2SD2115
- 2SD2114K
- 2SD2114
- 2SD2113
- 2SD2112
- 2SD2111
- 2SD2110
- 2SD211
- 2SD2109
- 2SD2108
- 2SD2107
- 2SD2106
- 2SD2105
- 2SD2104
- 2SD2103
- 2SD2102
- 2SD2101
- 2SD2100
- 2SD2099
- 2SD2098
2SD212数据表相关新闻
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2019-2-15
DdatasheetPDF页码索引
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