2SD2123晶体管资料

  • 2SD2123L,S别名:2SD2123L,S三极管、2SD2123L,S晶体管、2SD2123L,S晶体三极管

  • 2SD2123L,S生产厂家:日本日立公司

  • 2SD2123L,S制作材料:Si-NPN

  • 2SD2123L,S性质:低频或音频放大 (LF)_功率放大 (L)

  • 2SD2123L,S封装形式:直插封装

  • 2SD2123L,S极限工作电压:180V

  • 2SD2123L,S最大电流允许值:1.5A

  • 2SD2123L,S最大工作频率:180MHZ

  • 2SD2123L,S引脚数:3

  • 2SD2123L,S最大耗散功率:18W

  • 2SD2123L,S放大倍数

  • 2SD2123L,S图片代号:A-80

  • 2SD2123L,Svtest:180

  • 2SD2123L,Shtest:180000000

  • 2SD2123L,Satest:1.5

  • 2SD2123L,Swtest:18

  • 2SD2123L,S代换 2SD2123L,S用什么型号代替:2SC2983,2SC4027,2SC4072,

型号 功能描述 生产厂家 企业 LOGO 操作
2SD2123

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

2SD2123

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

RENESAS

瑞萨

2SD2123

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD2123

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

RENESAS

瑞萨

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

RENESAS

瑞萨

Silicon NPN Epitaxial

Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S)

HitachiHitachi Semiconductor

日立日立公司

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Transistors>Amplifiers/Bipolar

RENESAS

瑞萨

2SD2123产品属性

  • 类型

    描述

  • 型号

    2SD2123

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon NPN Epitaxial

更新时间:2025-10-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
6000
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS/瑞萨
22+
SOT-252
100000
代理渠道/只做原装/可含税
RENESAS
25+23+
TO252
45546
绝对原装正品现货,全新深圳原装进口现货
HITACHI
24+
TO-252
36800
HITACHI
2023+
TO-252
50000
原装现货
RENESAS/瑞萨
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
RENESAS
24+
TO252
16900
原装正品现货支持实单
RENESAS
1922+
SOT-252
35689
原装进口现货库存专业工厂研究所配单供货
HITACHI
01+
SOT-252
1894
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
24+
TO252
60000

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