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NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving or muting. FEATURES ● High DC Current Gain and Good hFE linearity. hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A) ● Low Collector Saturation Voltage.

NEC

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving or muting. FEATURES ● High DC Current Gain and Good hFE linearity. hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A) ● Low Collector Saturation Voltage.

RENESAS

瑞萨

NPN Silicon Epitaxia

Features ● High dc current gain and good hFE. ● Low collector saturation voltage. ● High VEBO.

KEXIN

科信电子

更新时间:2025-12-26 12:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
2511
SOT-89
126575
电子元器件采购降本30%!原厂直采,砍掉中间差价
NEC
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
NEC
24+
SOT-89
9600
原装现货,优势供应,支持实单!
NEC
24+
NA/
7250
原装现货,当天可交货,原型号开票
NEC
2023+
SOT-89
50000
原装现货
RENESAS
24+
SOT89
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RNS
23+
4406
原厂授权代理,海外优势订货渠道。可提供大量库存,详
NEC
06+PB
SOT89
1200
全新原装进口自己库存优势
RENESAS/瑞萨
2025+
SOT-89
5000
原装进口价格优 请找坤融电子!
NEC
1215+
SOT89
150000
全新原装,绝对正品,公司大量现货供应.

2SD1950/VL数据表相关新闻