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NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving or muting. FEATURES ● High DC Current Gain and Good hFE linearity. hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A) ● Low Collector Saturation Voltage.

NEC

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving or muting. FEATURES ● High DC Current Gain and Good hFE linearity. hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A) ● Low Collector Saturation Voltage.

RENESAS

瑞萨

NPN Silicon Epitaxia

Features ● High dc current gain and good hFE. ● Low collector saturation voltage. ● High VEBO.

KEXIN

科信电子

更新时间:2025-12-25 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
7250
原装现货,当天可交货,原型号开票
NEC
23+
SOT89
20000
全新原装假一赔十
RENESAS
24+
SOT89
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESAS
21+
SOT-89
49000
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
NEC
NEW
SOT89
8293
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
NEC
06+PB
SOT89
1200
全新原装进口自己库存优势
RENESAS/瑞萨
25+
SOT-89
32000
RENESAS/瑞萨全新特价2SD1950即刻询购立享优惠#长期有货
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
2450+
SOT89
8850
只做原装正品假一赔十为客户做到零风险!!

2SD1950/UL数据表相关新闻