POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High BVCEO ● Complements the 2SB1198

SOT-23 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) High BVCEO Complements the 2SB1198

Low-power pyroelectric infrared sensor signal processing chip

Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power

Power Transistor (80V, 0.5A)

Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB = 0.5A / 50mA) 2) High VCEO, VCEO= 80V 3) Complements the 2SB1198K.