丝印代码：1782Q；NPN Transistor

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SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High BVCEO ● Complements the 2SB1198

POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

SOT-23 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) High BVCEO Complements the 2SB1198

Power Transistor

Features ● Low VCE(sat).VCE(sat) = 0.2V(Typ.) (IC / IB= 0.5A / 50mA) ● High VCEO, VCEO=80V.

丝印代码：AJ*；Power Transistor (80V, 0.5A)

Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB = 0.5A / 50mA) 2) High VCEO, VCEO= 80V 3) Complements the 2SB1198K.