NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1691 is a low VCE(sat) transistor which has a large current capability and wide SOA. It is suitable for DC-DC converter, or driver of solenoid or motor. FEATURES ● Low Collector Saturation Voltage. VCE(sat) = 0.1 V TYP.(@IC/IB = 2.0 A/0.2 A) ● Large Current. IC(DC)

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT ■ FEATURES * High Power Dissipation * Complementary to 2SB1151

SILICON POWER TRANSISTOR

FEATURES • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A) • Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25°C), 20 W (@Tc = 25°C) • Complementary transistor: 2SB1151

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max.)@ IC= 2A ·Complement to Type 2SB1151 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, or driver of sol

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB1151 ·Low saturation voltage ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor

It is intented for use in power amplifier and switching applications.

DESCRIPTION It is intented for use in power amplifier and switching applications.

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

NPN Plastic-Encapsulate Transistors

Features • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Hal

NPN Plastic-Encapsulate Transistors

Features • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Hal

NPN Silicon Epitaxial Power Transistor

NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain.

NPN Plastic-Encapsulate Transistors

Features • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Hal

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor • Complementary transistor: 2SB1149

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS)= 100V(min.) ·DC Current Gain : hFE= 2000(Min.) @ IC= 1.5 A ·Complement to Type 2SB1149 APPLICATIONS ·Designed for general-purpose amplifier applications.

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION The 2SD1692 is a darlington transistor built-in dumper diode at E-C. It is suitable for use to operate from IC without predriver, such as hammer driver.

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION The 2SD1693 is a darlington transistor built-in a zener diode at B-C and a dumper diode at E-C. It is suitable for use to operate from IC without predriver, such as hammer driver.

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1694 is High HFE and Low VCE(sat) transistor. It is suitable for use to operate from IC without predriver, such as hammer driver.

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between

NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1697 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver. FEATURES ● High DC current gain ● Includes a dumper diode of E-C.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1698 is NPN silicon epitaxial darlington transistor designed for pulse motor driver, printer driver, solenoid driver. FEATURES ● High DC Current gain. ● Includes a dumper diode at E-C.

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1699 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver. FEATURES ● High DC Current Gain. ● Includes a dumpter diode at E-C.

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1699 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver. FEATURES ● High DC Current Gain. ● Includes a dumpter diode at E-C.

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

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Silicon NPN Power Transistors

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LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 60V 5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistor

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中等功率双极型晶体管

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 60V 5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor-Bipolar Power Transistors

Transistor-Bipolar Power Transistors