2SD169晶体管资料

  • 2SD1690别名:2SD1690三极管、2SD1690晶体管、2SD1690晶体三极管

  • 2SD1690生产厂家

  • 2SD1690制作材料:Si-N+Darl+Di

  • 2SD1690性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD1690封装形式:直插封装

  • 2SD1690极限工作电压:120V

  • 2SD1690最大电流允许值:8A

  • 2SD1690最大工作频率:<1MHZ或未知

  • 2SD1690引脚数:3

  • 2SD1690最大耗散功率:25W

  • 2SD1690放大倍数:β=5000

  • 2SD1690图片代号:B-5

  • 2SD1690vtest:120

  • 2SD1690htest:999900

  • 2SD1690atest:8

  • 2SD1690wtest:25

  • 2SD1690代换 2SD1690用什么型号代替:BD649F,BD651,BDW73D,2SD1590,2SD1591,2SD1773,2SD1792,

型号 功能描述 生产厂家&企业 LOGO 操作

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT ■FEATURES *HighPowerDissipation *Complementaryto2SB1151

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB1151 ·Lowsaturationvoltage ·Hightotalpowerdissipation:PT=1.3W ·LargecurrentcapabilityandwideSOA APPLICATIONS ·DC-DCconverter ·Driverofsolenoidormotor

SAVANTIC

Savantic, Inc.

SAVANTIC

SILICONPOWERTRANSISTOR

FEATURES •LargecurrentcapacityandlowVCE(sat): IC(DC)=5.0A,IC(pulse)=8.0A VCE(sat)=0.1VTYP.(@IC=2.0A,IB=0.2A) •LargepowerdissipationTO-126typepowertransistor PT=1.3W(@Ta=25°C),20W(@Tc=25°C) •Complementarytransistor:2SB1151

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONPOWERTRANSISTOR

DESCRIPTION The2SD1691isalowVCE(sat)transistorwhichhasalargecurrentcapabilityandwideSOA. ItissuitableforDC-DCconverter,ordriverofsolenoidormotor. FEATURES ●LowCollectorSaturationVoltage. VCE(sat)=0.1VTYP.(@IC/IB=2.0A/0.2A) ●LargeCurrent. IC(DC)

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

Itisintentedforuseinpoweramplifierandswitchingapplications.

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

TGS

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCollectorCurrent-IC=5A ·LowCollectorSaturationVoltage :VCE(sat)=0.3V(Max.)@IC=2A ·ComplementtoType2SB1151 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforuseinDC-DCconverter,ordriverofsol

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ComplementarySiliconPowerTtransistors

DESCRIPTION Itisintentedforuseinpower amplifierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

TGS

NPNPlastic-EncapsulateTransistors

Features •LowCollector-EmitterSaturationVoltage •LargeCollectorCurrent •HighPowerDissipation •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Hal

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNPlastic-EncapsulateTransistors

Features •LowCollector-EmitterSaturationVoltage •LargeCollectorCurrent •HighPowerDissipation •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Hal

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconEpitaxialPowerTransistor

NPNSiliconEpitaxialPowerTransistor ForLow-FrequenceyPowerAmplifiersand Mid-SpeedSwitching Thetransistorissubdividedintothreegroups,M,Land K,accordingtoitsDC-DCcurrentgain.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

NPNPlastic-EncapsulateTransistors

Features •LowCollector-EmitterSaturationVoltage •LargeCollectorCurrent •HighPowerDissipation •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Hal

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SILICONPOWERTRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR (DARLINGTONCONNECTION) FEATURES •HighDCcurrentgainduetoDarlingtonconnection •LargecurrentcapacityandlowVCE(sat) •LargepowerdissipationTO-126typepowertransistor •Complementarytransistor:2SB1149

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage:VCEO(SUS)=100V(min.) ·DCCurrentGain:hFE=2000(Min.)@IC=1.5A ·ComplementtoType2SB1149 APPLICATIONS ·Designedforgeneral-purposeamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSILICONDARLINGTONTRANSISTOR

DESCRIPTION The2SD1692isadarlingtontransistorbuilt-indumperdiodeatE-C. ItissuitableforusetooperatefromICwithoutpredriver,suchashammerdriver.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSILICONDARLINGTONTRANSISTOR

DESCRIPTION The2SD1693isadarlingtontransistorbuilt-inazenerdiodeatB-CandadumperdiodeatE-C. ItissuitableforusetooperatefromICwithoutpredriver,suchashammerdriver.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONPOWERTRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR (DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERS

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONPOWERTRANSISTOR

DESCRIPTION The2SD1694isHighHFEandLowVCE(sat)transistor. ItissuitableforusetooperatefromICwithoutpredriver,suchashammerdriver.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONPOWERTRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING The2SD1695isaDarlingtonconnectiontransistorand incorporatesadumperdiodebetweenthecollectorandemitterand aconstantvoltagediodeandprotectionelementsbetween

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION)FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING

NPNSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING The2SD1695isaDarlingtonconnectiontransistorandincorporatesadumperdiodebetweenthecollectorandemitterandaconstantvoltagediodeandprotectionelementsbetweenthe

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSILICONTRANSISTOR

DESCRIPTION The2SD1697isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotor,printerdriver,solenoiddriver. FEATURES ●HighDCcurrentgain ●IncludesadumperdiodeofE-C.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSILICONTRANSISTOR

DESCRIPTION The2SD1698isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotordriver,printerdriver,solenoiddriver. FEATURES ●HighDCCurrentgain. ●IncludesadumperdiodeatE-C.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

DESCRIPTION The2SD1699isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotor,printerdriver,solenoiddriver. FEATURES ●HighDCCurrentGain. ●IncludesadumpterdiodeatE-C.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

OldCompanyNameinCatalogsandOtherDocuments

DESCRIPTION The2SD1699isNPNsiliconepitaxialdarlingtontransistordesignedforpulsemotor,printerdriver,solenoiddriver. FEATURES ●HighDCCurrentGain. ●IncludesadumpterdiodeatE-C.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:250.85 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

SiliconNPNPowerTransistors

文件:114.1 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:250.85 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:250.85 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:250.85 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:250.85 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:250.85 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:250.85 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:250.85 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:250.85 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

文件:250.85 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR) 描述:TRANS NPN 60V 5A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SiliconNPNPowerTransistor

文件:618.08 Kbytes Page:3 Pages

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

PJSEMI

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR) 描述:TRANS NPN 60V 5A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

2SD169产品属性

  • 类型

    描述

  • 型号

    2SD169

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans GP BJT NPN 60V 5A 3-Pin TO-126 Cut Tape

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    NPN Power Transistor, 60V, 5.0A, TO-126

更新时间:2024-6-21 17:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC/Renesas Electronics Americ
21+
TO-126
9377
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
1738+
TO-126
8529
科恒伟业!只做原装正品,假一赔十!
NEC
23+
NA/
9377
优势代理渠道,原装正品,可全系列订货开增值税票
NIP
23+
原厂原装
4000
全新原装
NEC
TO-126
13500
16余年资质 绝对原盒原盘 更多数量
RENESAS-瑞萨
24+25+/26+27+
车规-元器件
143788
一一有问必回一特殊渠道一有长期订货一备货HK仓库
TO-126
10000
全新
NEC
21+
65230
NEC
22+
TO-126
25000
原装现货,价格优惠,假一罚十
NEC
2021+
TO-126
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

2SD169芯片相关品牌

  • AAC
  • AITSEMI
  • Atmel
  • BITECH
  • DBLECTRO
  • HUAXINAN
  • MOLEX3
  • Nuvoton
  • OSRAM
  • RECOM
  • SIEMENS
  • WILLOW

2SD169数据表相关新闻