NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1691 is a low VCE(sat) transistor which has a large current capability and wide SOA. It is suitable for DC-DC converter, or driver of solenoid or motor. FEATURES ● Low Collector Saturation Voltage. VCE(sat) = 0.1 V TYP.(@IC/IB = 2.0 A/0.2 A) ● Large Current. IC(DC)

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT ■ FEATURES * High Power Dissipation * Complementary to 2SB1151

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SB1151 ·Low saturation voltage ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor

SILICON POWER TRANSISTOR

FEATURES • Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A) • Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25°C), 20 W (@Tc = 25°C) • Complementary transistor: 2SB1151

It is intented for use in power amplifier and switching applications.

DESCRIPTION It is intented for use in power amplifier and switching applications.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max.)@ IC= 2A ·Complement to Type 2SB1151 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, or driver of sol

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

Silicon NPN Power Transistors

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Transistor-Bipolar Power Transistors

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

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NPN Plastic-Encapsulate Transistors

Features • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Hal

NPN Plastic-Encapsulate Transistors

Features • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Hal

NPN Silicon Epitaxial Power Transistor

NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain.

NPN Plastic-Encapsulate Transistors

Features • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Hal

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

中等功率双极型晶体管

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT

文件：250.85 Kbytes Page：4 Pages

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 60V 5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：D1691；Silicon NPN Power Transistor

文件：618.08 Kbytes Page：3 Pages

中等功率双极型晶体管

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 60V 5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Epitaxial Power Transistor

NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain.