型号 功能描述 生产厂家 企业 LOGO 操作

Bipolar Transistor

Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted • Large current capacity and highly resistant to breakdown • Excellent linearity of hFE in the region from low current to high current • Ultrasmall size supports high-density,

ONSEMI

安森美半导体

1.5V,3V Strobe Applications

1.5V, 3V Strobe Applications Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. • Large current capacity and highly resistant to breakdown. • Excellent linearity of hFE in the region from low current to high current. • Ultrasmall

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor

Features ● Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. ● Large current capacity and highly resistant to breakdown. ● Excellent linearity of hFE in the region from low current to high current. ● Ultrasmall size supports high-density, u

KEXIN

科信电子

1.5V, 3V Strobe Applications

文件:91.4 Kbytes Page:4 Pages

SANYO

三洋

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 10V 3A PCP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

2SD1620-TD产品属性

  • 类型

    描述

  • 型号

    2SD1620-TD

  • 功能描述

    两极晶体管 - BJT BIP NPN 3A 10V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-12-28 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ONSEMI/安森美
2511
SOT-89
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
SANYO/三洋
23+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
三年内
1983
只做原装正品
ON/安森美
2025+
SOT-89
5000
原装进口价格优 请找坤融电子!
SANYO/三洋
2447
SOT-89
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SANYO
1922+
SOT-89
35689
原装进口现货库存专业工厂研究所配单供货
ON
24+
SOT-89 / PCP-1
25000
ON全系列可订货
SANYO/三洋
23+
SOT-89
50000
全新原装正品现货,支持订货
SANYO
24+
SOT-89
23900
新进库存/原装
ONSemiconductor
24+
NA
3000
进口原装正品优势供应

2SD1620-TD数据表相关新闻